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基于二维 SnSe/MoS 范德瓦尔斯异质结构的光电突触记忆晶体管在紫外臭氧处理下的性能研究。

Optoelectronic Synaptic Memtransistor Based on 2D SnSe/MoS van der Waals Heterostructure under UV-Ozone Treatment.

机构信息

School of Science, Wuhan University of Technology, Wuhan, 430070, China.

出版信息

Small Methods. 2023 Jun;7(6):e2201679. doi: 10.1002/smtd.202201679. Epub 2023 Mar 16.

Abstract

Memristive switching devices with electrically and optically invoked synaptic behaviors show great promise in constructing an artificial biological visual system. Through rational design and integration, 2D materials and their van der Waals (vdW) heterostructures can be applied to realize multifunctional optoelectronic devices. Here, a multifunctional optoelectronic synaptic memtransistor based on a SnSe/MoS vdW p-n heterojunction to simulate the human biological visual system is reported. By employing simple mild UV-ozone treatment, the device exhibits reversible resistive switching (RS) behavior with switching ratio up to 10 . The retina-like selective response to different input light wavelengths is activated, as well as programmable multilevel resistance states and long-term synaptic plasticity. Moreover, memory and logic functions analogous to those found in the visual cortex of the brain are performed by controlling the optical and electrical input signals. This work proposes a feasible strategy to modulate RS in vdW heterostructures for memristive devices, which show significant potential for neuromorphic processing.

摘要

具有电和光引发的突触行为的忆阻开关器件在构建人工生物视觉系统方面显示出巨大的潜力。通过合理的设计和集成,二维材料及其范德华(vdW)异质结可用于实现多功能光电设备。在这里,报道了一种基于 SnSe/MoS vdW p-n 异质结的多功能光电突触忆阻器,以模拟人类生物视觉系统。通过采用简单温和的 UV-臭氧处理,该器件表现出高达 10 的可逆电阻开关(RS)行为。激活了对不同输入光波长的类似视网膜的选择性响应,以及可编程的多级电阻状态和长期突触可塑性。此外,通过控制光和电输入信号,可以执行类似于大脑视觉皮层中发现的记忆和逻辑功能。这项工作提出了一种在 vdW 异质结构中调节 RS 的可行策略,这对于神经形态处理具有重要意义。

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