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增强介质辅助的晶圆级MoS和WS在h-BN上的光学特性。

Enhancing optical characteristics of mediator-assisted wafer-scale MoSand WSon h-BN.

作者信息

Chiu Sheng-Kuei, Li Ming-Chi, Ci Ji-Wei, Hung Yuan-Chih, Tsai Dung-Sheng, Chen Chien-Han, Lin Li-Hung, Watanabe Kenji, Taniguchi Takashi, Aoki Nobuyuki, Hsieh Ya-Ping, Chuang Chiashain

机构信息

Department of Materials Science and Engineering, Feng Chia University, Taichung 40724, Taiwan.

Department of Electronic Engineering, Chung Yuan Christian University, Taoyuan 320, Taiwan.

出版信息

Nanotechnology. 2023 Apr 11;34(25). doi: 10.1088/1361-6528/acc5f1.

DOI:10.1088/1361-6528/acc5f1
PMID:36944230
Abstract

Two-dimensional (2D) materials and their heterostructures exhibit intriguing optoelectronic properties; thus, they are good platforms for exploring fundamental research and further facilitating real device applications. The key is to preserve the high quality and intrinsic properties of 2D materials and their heterojunction interface even in production scale during the transfer and assembly process so as to apply in semiconductor manufacturing field. In this study, we successfully adopted a wet transfer existing method to separate mediator-assisted wafer-scale from SiO/Si growing wafer for the first time with intermediate annealing to fabricate wafer-scale MoS/h-BN and WS/h-BN heterostructures on a SiO/Si wafer. Interestingly, the high-quality wafer-scale 2D material heterostructure optical properties were enhanced and confirmed by Raman and photoluminescence spectroscopy. Our approach can be applied to other 2D materials and expedite mass production for industrial applications.

摘要

二维(2D)材料及其异质结构展现出引人入胜的光电特性;因此,它们是探索基础研究以及进一步推动实际器件应用的良好平台。关键在于即便在转移和组装过程的生产规模下,仍要保持二维材料及其异质结界面的高质量和固有特性,以便应用于半导体制造领域。在本研究中,我们首次成功采用一种现有的湿法转移方法,通过中间退火将介质辅助的晶圆级从SiO/Si生长晶圆上分离,从而在SiO/Si晶圆上制造出晶圆级的MoS/h-BN和WS/h-BN异质结构。有趣的是,高质量的晶圆级二维材料异质结构的光学特性通过拉曼光谱和光致发光光谱得到了增强和证实。我们的方法可应用于其他二维材料,并加快工业应用的大规模生产。

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