Sokolov Ivan S, Averyanov Dmitry V, Parfenov Oleg E, Taldenkov Alexander N, Rybin Maxim G, Tokmachev Andrey M, Storchak Vyacheslav G
National Research Center "Kurchatov Institute", Kurchatov Sq. 1, Moscow, 123182, Russia.
Prokhorov General Physics Institute of the Russian Academy of Sciences, 38 Vavilov St., Moscow, 119991, Russia.
Small. 2023 Jul;19(28):e2301295. doi: 10.1002/smll.202301295. Epub 2023 Mar 27.
Imprinting magnetism into graphene may lead to unconventional electron states and enable the design of spin logic devices with low power consumption. The ongoing active development of 2D magnets suggests their coupling with graphene to induce spin-dependent properties via proximity effects. In particular, the recent discovery of submonolayer 2D magnets on surfaces of industrial semiconductors provides an opportunity to magnetize graphene coupled with silicon. Here, synthesis and characterization of large-area graphene/Eu/Si(001) heterostructures combining graphene with a submonolayer magnetic superstructure of Eu on silicon are reported. Eu intercalation at the interface of the graphene/Si(001) system results in a Eu superstructure different from those formed on pristine Si in terms of symmetry. The resulting system graphene/Eu/Si(001) exhibits 2D magnetism with the transition temperature controlled by low magnetic fields. Negative magnetoresistance and the anomalous Hall effect in the graphene layer provide evidence for spin polarization of the carriers. Most importantly, the graphene/Eu/Si system seeds a class of graphene heterostructures based on submonolayer magnets aiming at applications in graphene spintronics.
将磁性印记到石墨烯中可能会导致非常规的电子态，并有助于设计低功耗的自旋逻辑器件。二维磁体的持续积极发展表明，它们与石墨烯耦合可通过近邻效应诱导自旋相关特性。特别是，最近在工业半导体表面发现的亚单层二维磁体为磁化与硅耦合的石墨烯提供了契机。在此，报道了大面积石墨烯/Eu/Si(001)异质结构的合成与表征，该结构将石墨烯与硅上的Eu亚单层磁性超结构相结合。在石墨烯/Si(001)系统界面处插入Eu会导致形成一种在对称性方面与在原始Si上形成的超结构不同的Eu超结构。所得的石墨烯/Eu/Si(001)系统表现出二维磁性，其转变温度由低磁场控制。石墨烯层中的负磁阻和反常霍尔效应为载流子的自旋极化提供了证据。最重要的是，石墨烯/Eu/Si系统催生了一类基于亚单层磁体的石墨烯异质结构，旨在应用于石墨烯自旋电子学领域。
