更正：通过分子束外延在异质外延金刚石（001）衬底上选择性区域生长氮化镓纳米线和纳米鳍。
Correction: Selective area growth of GaN nanowires and nanofins by molecular beam epitaxy on heteroepitaxial diamond (001) substrates.
作者信息
Pantle Florian, Becker Fabian, Kraut Max, Wörle Simon, Hoffmann Theresa, Artmeier Sabrina, Stutzmann Martin
机构信息
Walter Schottky Institut and Physics Department, Technische Universität München Am Coulombwall 4 85748 Garching Germany
出版信息
Nanoscale Adv. 2023 Mar 20;5(7):2119. doi: 10.1039/d3na90031b. eCollection 2023 Mar 28.
Abstract
[This corrects the article DOI: 10.1039/D1NA00221J.].
摘要
[本文更正了文章DOI：10.1039/D1NA00221J。]
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