College of Engineering and Applied Sciences, Jiangsu Key Laboratory of Artificial Functional Materials, and National Laboratory of Solid State Microstructures, Nanjing University, Nanjing, 210093, People's Republic of China.
State Key Laboratory of Organic Electronics and Information Displays and Institute of Advanced Materials, Nanjing University of Posts and Telecommunications, Nanjing, 210023, People's Republic of China.
Sci Rep. 2023 Apr 11;13(1):5865. doi: 10.1038/s41598-023-32959-w.
Organic field-effect transistors (OFETs) with polymer charge-trapping dielectric, which exhibit many advantages over Si-based memory devices such as low cost, light weight, and flexibility, still suffer challenges in practical application due to the unsatisfied endurance characteristics and even the lack of fundamental of behind mechanism. Here, we revealed that the degradation of endurance characteristics of pentacene OFET with poly(2-vinyl naphthalene) (PVN) as charge-storage layer is dominated by the deep hole-traps in PVN by using the photo-stimulated charge de-trapping technique with the fiber-coupled monochromatic-light probes. The depth distribution of hole-traps in PVN film of pentacene OFET is also provided.
具有聚合物电荷俘获介电层的有机场效应晶体管（OFET）在成本、重量和灵活性等方面优于基于 Si 的存储器件，但由于耐久性特性不令人满意，甚至缺乏背后的机制基础，因此在实际应用中仍面临挑战。在这里，我们通过使用光纤耦合单色光探针的光刺激电荷去俘获技术，揭示了以聚（2-乙烯基萘）（PVN）作为电荷存储层的并五苯 OFET 的耐久性特性的退化主要是由 PVN 中的深空穴俘获引起的。还提供了并五苯 OFET 的 PVN 薄膜中空穴俘获的深度分布。
