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用于 28nm FDSOI 技术中从 EMG 传感器进行信号处理的全差分模拟前端。

A Fully Differential Analog Front-End for Signal Processing from EMG Sensor in 28 nm FDSOI Technology.

机构信息

Department of Microelectronics, Brno University of Technology, Technicka 3058/10, 61600 Brno, Czech Republic.

出版信息

Sensors (Basel). 2023 Mar 24;23(7):3422. doi: 10.3390/s23073422.

DOI:10.3390/s23073422
PMID:37050482
原文链接:https://pmc.ncbi.nlm.nih.gov/articles/PMC10098806/
Abstract

This paper presents a novel analog front-end for EMG sensor signal processing powered by 1 V. Such a low supply voltage requires specific design steps enabled using the 28 nm fully depleted silicon on insulator (FDSOI) technology from STMicroelectronics. An active ground circuit is implemented to keep the input common-mode voltage close to the analog ground and to minimize external interference. The amplifier circuit comprises an input instrumentation amplifier (INA) and a programmable-gain amplifier (PGA). Both are implemented in a fully differential topology. The actual performance of the circuit is analyzed using the corner and Monte Carlo analyses that comprise fifth-hundred samples for the global and local process variations. The proposed circuit achieves a high common-mode rejection ratio () of 105.5 dB and a high input impedance of 11 GΩ with a chip area of 0.09 mm2.

摘要

本文提出了一种新的模拟前端，用于由 1 V 供电的 EMG 传感器信号处理。如此低的供电电压需要使用 STMicroelectronics 的 28nm 全耗尽绝缘体上硅（FDSOI）技术来实现特定的设计步骤。采用有源地电路来保持输入共模电压接近模拟地，并最大程度减少外部干扰。放大器电路包括输入仪表放大器（INA）和可编程增益放大器（PGA）。两者均采用全差分拓扑结构实现。使用角和蒙特卡罗分析来分析电路的实际性能，包括针对全局和局部工艺变化的第五百个样本。所提出的电路实现了 105.5dB 的高共模抑制比（CMRR）和 11GΩ 的高输入阻抗，芯片面积为 0.09mm2。

https://cdn.ncbi.nlm.nih.gov/pmc/blobs/df9c/10098806/ab58dcedcaee/sensors-23-03422-g015.jpg
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https://cdn.ncbi.nlm.nih.gov/pmc/blobs/df9c/10098806/bb9e88219a8d/sensors-23-03422-g007.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/df9c/10098806/92da5179b0b5/sensors-23-03422-g008.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/df9c/10098806/132eb65c4733/sensors-23-03422-g009.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/df9c/10098806/5eda73a677ee/sensors-23-03422-g010.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/df9c/10098806/54588934fcd6/sensors-23-03422-g011.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/df9c/10098806/c5f289dd2167/sensors-23-03422-g012.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/df9c/10098806/62a79c9b40f3/sensors-23-03422-g013.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/df9c/10098806/bcd5ffee5fc0/sensors-23-03422-g014.jpg
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https://cdn.ncbi.nlm.nih.gov/pmc/blobs/df9c/10098806/9265501b1637/sensors-23-03422-g002.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/df9c/10098806/c0654416ea07/sensors-23-03422-g003.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/df9c/10098806/e8b0f59bc05c/sensors-23-03422-g004.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/df9c/10098806/8b410f736656/sensors-23-03422-g005.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/df9c/10098806/a7d27ec7bf9f/sensors-23-03422-g006.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/df9c/10098806/bb9e88219a8d/sensors-23-03422-g007.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/df9c/10098806/92da5179b0b5/sensors-23-03422-g008.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/df9c/10098806/132eb65c4733/sensors-23-03422-g009.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/df9c/10098806/5eda73a677ee/sensors-23-03422-g010.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/df9c/10098806/54588934fcd6/sensors-23-03422-g011.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/df9c/10098806/c5f289dd2167/sensors-23-03422-g012.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/df9c/10098806/62a79c9b40f3/sensors-23-03422-g013.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/df9c/10098806/bcd5ffee5fc0/sensors-23-03422-g014.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/df9c/10098806/ab58dcedcaee/sensors-23-03422-g015.jpg

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