Potential of La-Doped SrTiO Thin Films Grown by Metal-Organic Vapor Phase Epitaxy for Thermoelectric Applications.

La-doped SrTiO thin films with high structural quality were homoepitaxially grown by the metal-organic vapor phase epitaxy (MOVPE) technique. Thermogravimetric characterization of the metal-organic precursors determines suitable flash evaporator temperatures for transferring the liquid source materials in the gas phase of the reactor chamber. An adjustment of the charge carrier concentration in the films, which is necessary for optimizing the thermoelectric power factor, was performed by introducing a defined amount of the metal-organic compound La(tmhd) and tetraglyme to the liquid precursor solution. X-ray diffraction and atomic force microscopy verified the occurrence of the pure perovskite phase exhibiting a high structural quality for all La concentrations. The electrical conductivity of the films obtained from Hall-effect measurements increases linearly with the La concentration in the gas phase, which is attributed to the incorporation of La ions on the Sr perovskite sites by substitution inferred from photoemission spectroscopy. The resulting structural defects were discussed concerning the formation of occasional Ruddlesden-Popper-like defects. The thermoelectric properties determined by Seebeck measurements demonstrate the high potential of SrTiO thin films grown by MOVPE for thermoelectric applications.