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基于TiO/ZnO双电子层的稳定（FAPbI）（MAPbBr）钙钛矿太阳能电池的数值分析

Numerical Analysis of Stable (FAPbI)(MAPbBr)-Based Perovskite Solar Cell with TiO/ZnO Double Electron Layer.

作者信息

Gan Yongjin, Qiu Guixin, Qin Binyi, Bi Xueguang, Liu Yucheng, Nie Guochao, Ning Weilian, Yang Ruizhao

机构信息

Guangxi Colleges and Universities Key Laboratory of Complex System Optimization and Big Data Processing, Yulin Normal University, Yulin 537000, China.

Office of the Party Committee, Guangxi Minzu Normal University, Chongzuo 532200, China.

出版信息

Nanomaterials (Basel). 2023 Apr 8;13(8):1313. doi: 10.3390/nano13081313.

DOI:10.3390/nano13081313
PMID:37110899
原文链接:https://pmc.ncbi.nlm.nih.gov/articles/PMC10142877/
Abstract

Although perovskite solar cells have achieved excellent photoelectric conversion efficiencies, there are still some shortcomings, such as defects inside and at the interface as well as energy level dislocation, which may lead to non-radiative recombination and reduce stability. Therefore, in this study, a double electron transport layer (ETL) structure of FTO/TiO/ZnO/(FAPbI)(MAPbBr)/Spiro-OMeTAD is investigated and compared with single ETL structures of FTO/TiO/(FAPbI)(MAPbBr)/Spiro-OMeTAD and FTO/ZnO/(FAPbI)(MAPbBr)/Spiro-OMeTAD using the SCAPS-1D simulation software, with special attention paid to the defect density in the perovskite active layer, defect density at the interface between the ETL and the perovskite active layer, and temperature. Simulation results reveal that the proposed double ETL structure could effectively reduce the energy level dislocation and inhibit the non-radiative recombination. The increases in the defect density in the perovskite active layer, the defect density at the interface between the ETL and the perovskite active layer, and the temperature all facilitate carrier recombination. Compared with the single ETL structure, the double ETL structure has a higher tolerance for defect density and temperature. The simulation outcomes also confirm the possibility of preparing a stable perovskite solar cell.

摘要

尽管钙钛矿太阳能电池已实现了优异的光电转换效率，但仍存在一些缺点，如内部和界面处的缺陷以及能级错位，这可能导致非辐射复合并降低稳定性。因此，在本研究中，使用SCAPS - 1D模拟软件研究了FTO/TiO/ZnO/(FAPbI)(MAPbBr)/Spiro - OMeTAD的双电子传输层（ETL）结构，并将其与FTO/TiO/(FAPbI)(MAPbBr)/Spiro - OMeTAD和FTO/ZnO/(FAPbI)(MAPbBr)/Spiro - OMeTAD的单ETL结构进行比较，特别关注钙钛矿活性层中的缺陷密度、ETL与钙钛矿活性层之间界面处的缺陷密度以及温度。模拟结果表明，所提出的双ETL结构可以有效降低能级错位并抑制非辐射复合。钙钛矿活性层中的缺陷密度、ETL与钙钛矿活性层之间界面处的缺陷密度以及温度的增加均促进载流子复合。与单ETL结构相比，双ETL结构对缺陷密度和温度具有更高的耐受性。模拟结果还证实了制备稳定钙钛矿太阳能电池的可能性。

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