Liu Liming, Ma Yajie, Wang Yousheng, Ma Qiaoyan, Wang Zixuan, Yang Zigan, Wan Meixiu, Mahmoudi Tahmineh, Hahn Yoon-Bong, Mai Yaohua
Institute of New Energy Technology, College of Information Science and Technology, Jinan University, Guangzhou, 510632, People's Republic of China.
Key Laboratory of New Semiconductors and Devices of Guangdong Higher Education Institutes, Jinan University, Guangzhou, 510632, People's Republic of China.
Nanomicro Lett. 2023 Apr 30;15(1):117. doi: 10.1007/s40820-023-01088-4.
NiO-based inverted perovskite solar cells (PSCs) have presented great potential toward low-cost, highly efficient and stable next-generation photovoltaics. However, the presence of energy-level mismatch and contact-interface defects between hole-selective contacts (HSCs) and perovskite-active layer (PAL) still limits device efficiency improvement. Here, we report a graded configuration based on both interface-cascaded structures and p-type molecule-doped composites with two-/three-dimensional formamidinium-based triple-halide perovskites. We find that the interface defects-induced non-radiative recombination presented at HSCs/PAL interfaces is remarkably suppressed because of efficient hole extraction and transport. Moreover, a strong chemical interaction, halogen bonding and coordination bonding are found in the molecule-doped perovskite composites, which significantly suppress the formation of halide vacancy and parasitic metallic lead. As a result, NiO-based inverted PSCs present a power-conversion-efficiency over 23% with a high fill factor of 0.84 and open-circuit voltage of 1.162 V, which are comparable to the best reported around 1.56-electron volt bandgap perovskites. Furthermore, devices with encapsulation present high operational stability over 1,200 h during T lifetime measurement (the time as a function of PCE decreases to 90% of its initial value) under 1-sun illumination in ambient-air conditions.
基于氧化镍的倒置钙钛矿太阳能电池（PSC）在低成本、高效且稳定的下一代光伏领域展现出了巨大潜力。然而，空穴选择性接触（HSC）与钙钛矿活性层（PAL）之间存在的能级不匹配和接触界面缺陷，仍然限制了器件效率的提升。在此，我们报道了一种基于界面级联结构和p型分子掺杂复合材料的分级结构，该结构采用二维/三维甲脒基三卤化物钙钛矿。我们发现，由于有效的空穴提取和传输，HSC/PAL界面处由界面缺陷引起的非辐射复合得到了显著抑制。此外，在分子掺杂的钙钛矿复合材料中发现了强烈的化学相互作用、卤键和配位键，这显著抑制了卤化物空位和寄生金属铅的形成。结果，基于氧化镍的倒置PSC呈现出超过23%的功率转换效率，填充因子高达0.84，开路电压为1.162 V，这与报道的最佳1.56电子伏特带隙钙钛矿相当。此外，在环境空气条件下1个太阳光照下的T寿命测量（功率转换效率随时间下降至其初始值的90%时的时间）过程中，封装后的器件在1200小时以上表现出高运行稳定性。
