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用于高效稳定倒置钙钛矿太阳能电池的表面反应。

Surface reaction for efficient and stable inverted perovskite solar cells.

机构信息

Chemistry and Nanoscience Center, National Renewable Energy Laboratory, Golden, CO, USA.

Department of Physics and Astronomy and Wright Center for Photovoltaics Innovation and Commercialization, University of Toledo, Toledo, OH, USA.

出版信息

Nature. 2022 Nov;611(7935):278-283. doi: 10.1038/s41586-022-05268-x. Epub 2022 Sep 1.

DOI:10.1038/s41586-022-05268-x
PMID:36049505
Abstract

Perovskite solar cells (PSCs) with an inverted structure (often referred to as the p-i-n architecture) are attractive for future commercialization owing to their easily scalable fabrication, reliable operation and compatibility with a wide range of perovskite-based tandem device architectures. However, the power conversion efficiency (PCE) of p-i-n PSCs falls behind that of n-i-p (or normal) structure counterparts. This large performance gap could undermine efforts to adopt p-i-n architectures, despite their other advantages. Given the remarkable advances in perovskite bulk materials optimization over the past decade, interface engineering has become the most important strategy to push PSC performance to its limit. Here we report a reactive surface engineering approach based on a simple post-growth treatment of 3-(aminomethyl)pyridine (3-APy) on top of a perovskite thin film. First, the 3-APy molecule selectively reacts with surface formamidinium ions, reducing perovskite surface roughness and surface potential fluctuations associated with surface steps and terraces. Second, the reaction product on the perovskite surface decreases the formation energy of charged iodine vacancies, leading to effective n-type doping with a reduced work function in the surface region. With this reactive surface engineering, the resulting p-i-n PSCs obtained a PCE of over 25 per cent, along with retaining 87 per cent of the initial PCE after over 2,400 hours of 1-sun operation at about 55 degrees Celsius in air.

摘要

钙钛矿太阳能电池(PSCs)具有倒置结构(通常称为 p-i-n 架构),由于其易于扩展的制造工艺、可靠的操作和与各种钙钛矿基串联器件架构的兼容性,因此对于未来的商业化应用具有吸引力。然而,p-i-n PSCs 的功率转换效率(PCE)落后于 n-i-p(或正常)结构的对应物。这种巨大的性能差距可能会破坏采用 p-i-n 架构的努力,尽管它们还有其他优势。鉴于过去十年中钙钛矿体材料优化方面的显著进展,界面工程已成为推动 PSC 性能达到极限的最重要策略。在这里,我们报告了一种基于在钙钛矿薄膜顶部进行简单的后生长 3-(氨甲基)吡啶(3-APy)处理的反应性表面工程方法。首先,3-APy 分子选择性地与表面甲脒离子反应,降低钙钛矿表面粗糙度和与表面台阶和平台相关的表面电势波动。其次,钙钛矿表面上的反应产物降低了带电碘空位的形成能,导致表面区域中有效 n 型掺杂和功函数降低。通过这种反应性表面工程,所得的 p-i-n PSCs 的 PCE 超过 25%,并且在空气环境中约 55°C 下 1 个太阳光照下运行超过 2400 小时后,初始 PCE 的保留率仍达到 87%。

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