So Ernest, Yeon Pyungwoo, Chichilnisky E J, Arbabian Amin
Department of Electrical Engineering, Stanford University, Stanford, CA 94305 USA.
IEEE J Solid-State Circuits. 2022 Nov;57(11):3429-3441. doi: 10.1109/jssc.2022.3171233. Epub 2022 May 13.
Single modality wireless power transfer has limited depth for mm-sized implants across air / tissue or skull / tissue interfaces because they either suffer from high loss in tissue (RF, Optical) or high reflection at the medium interface (Ultrasound (US)). This paper proposes an RF-US relay chip at the media interface avoiding the reflection at the boundary, and enabling efficient wireless powering to mm-sized deep implants across multiple media. The relay chip rectifies the incoming RF power through an 85.5% efficient RF inductive link (across air) using a multi-output regulating rectifier (MORR) with 81% power conversion efficiency (PCE) at 186 mW load, and transmits ultrasound using adiabatic power amplifiers (PAs) to the implant in order to minimize cascaded power loss. To adapt the US focus to implant movement or placement, beamforming was implemented using 6 channels of US PAs with 2-bit phase control (0, 90, 180, and 270°) and 3 different amplitudes (6-29, 4.5, and 1.8 V) from the MORR. The adiabatic PA contributes a 30-40% increase in efficiency over class-D and beamforming increases the efficiency by 251% at 2.5 cm over fixed focusing. The proof-of-concept powering system for a retinal implant, from an external PA on a pair of glasses to a hydrophone with 1.2 cm (air) + 2.9 cm (agar eyeball phantom in mineral oil) separation distance, had a power delivered to the load (PDL) of 946 W. The 2.3 × 2 mm relay chip was fabricated in a 180 nm high-voltage (HV) BCD process.
对于毫米级植入物,单模态无线电力传输在跨越空气/组织或颅骨/组织界面时深度有限,因为它们要么在组织中存在高损耗(射频、光学),要么在介质界面处存在高反射(超声波(US))。本文提出了一种位于介质界面的射频 - 超声中继芯片,该芯片可避免边界处的反射,并能实现跨多种介质对毫米级深度植入物进行高效无线供电。该中继芯片通过一个效率为85.5%的射频电感链路(跨越空气),利用多输出调节整流器(MORR)对输入的射频功率进行整流,在186毫瓦负载下功率转换效率(PCE)为81%,并使用绝热功率放大器(PA)向植入物发射超声波,以尽量减少级联功率损耗。为了使超声焦点适应植入物的移动或放置,使用了6个通道的超声功率放大器并采用2位相位控制(0、90、180和270°)以及来自MORR的3种不同幅度(6 - 29、4.5和1.8伏)来实现波束形成。绝热功率放大器相比D类放大器效率提高30 - 40%,与固定聚焦相比,波束形成在2.5厘米处效率提高251%。用于视网膜植入物的概念验证供电系统,从一副眼镜上的外部功率放大器到相距1.2厘米(空气) + 2.9厘米(矿物油中的琼脂眼球模型)的水听器,传递到负载的功率(PDL)为946微瓦。这个2.3×2毫米的中继芯片采用180纳米高压(HV)BCD工艺制造。