Faculty of Electronic Engineering, Guangxi University of Science and Technology, Liuzhou 545006, China.
Institute of Advanced Optoelectronic Materials and Technology, College of Big Data and Information Engineering, Guizhou University, Guiyang 550025, China.
Molecules. 2023 Apr 30;28(9):3835. doi: 10.3390/molecules28093835.
A facile hydrothermal process has been developed to synthesize the α-FeO nanowire arrays with a preferential growth orientation along the [110] direction. The W/α-FeO/FTO memory device with the nonvolatile resistive switching behavior has been achieved. The resistance ratio (R/R) of the W/α-FeO/FTO memory device exceeds two orders of magnitude, which can be preserved for more than 10s without obvious decline. Furthermore, the carrier transport properties of the W/α-FeO/FTO memory device are dominated by the Ohmic conduction mechanism in the low resistance state and trap-controlled space-charge-limited current conduction mechanism in the high resistance state, respectively. The partial formation and rupture of conducting nanofilaments modified by the intrinsic oxygen vacancies have been suggested to be responsible for the nonvolatile resistive switching behavior of the W/α-FeO/FTO memory device. This work suggests that the as-prepared α-FeO nanowire-based W/α-FeO/FTO memory device may be a potential candidate for applications in the next-generation nonvolatile memory devices.
一种简便的水热法被开发出来，用于合成具有沿[110]方向择优生长的α-FeO 纳米线阵列。已经实现了具有非易失性电阻开关行为的 W/α-FeO/FTO 存储器器件。W/α-FeO/FTO 存储器器件的电阻比（R/R）超过两个数量级，可以在没有明显下降的情况下保持超过 10 秒。此外，W/α-FeO/FTO 存储器器件的载流子输运性质分别由低电阻状态下的欧姆传导机制和高电阻状态下的陷阱控制空间电荷限制电流传导机制主导。部分形成和内在氧空位修饰的导电纳米丝的断裂被认为是 W/α-FeO/FTO 存储器器件非易失性电阻开关行为的原因。这项工作表明，所制备的基于α-FeO 纳米线的 W/α-FeO/FTO 存储器器件可能是下一代非易失性存储器器件应用的潜在候选者。
