Cai Qing, You Haifan, Guo Hui, Wang Jin, Liu Bin, Xie Zili, Chen Dunjun, Lu Hai, Zheng Youdou, Zhang Rong
Key Laboratory of Advanced Photonic and Electronic Materials, School of Electronic Science and Engineering, Nanjing University, Nanjing, 210093, China.
Collaborative Innovation Center for Optoelectronic Semiconductors and Efficient Devices, Department of Physics, Xiamen University, Xiamen, 361005, China.
Light Sci Appl. 2021 Apr 30;10(1):94. doi: 10.1038/s41377-021-00527-4.
Solar-blind ultraviolet (UV) photodetectors (PDs) have attracted tremendous attention in the environmental, industrial, military, and biological fields. As a representative III-nitride material, AlGaN alloys have broad development prospects in the field of solar-blind detection due to their superior properties, such as tunable wide bandgaps for intrinsic UV detection. In recent decades, a variety of AlGaN-based PDs have been developed to achieve high-precision solar-blind UV detection. As integrated optoelectronic technology advances, AlGaN-based focal plane arrays (FPAs) are manufactured and exhibit outstanding solar-blind imaging capability. Considering the rapid development of AlGaN detection techniques, this paper comprehensively reviews the progress on AlGaN-based solar-blind UV PDs and FPAs. First, the basic physical properties of AlGaN are presented. The epitaxy and p-type doping problems of AlGaN alloys are then discussed. Diverse PDs, including photoconductors and Schottky, metal-semiconductor-metal (MSM), p-i-n, and avalanche photodiodes (APDs), are demonstrated, and the physical mechanisms are analyzed to improve device performance. Additionally, this paper summarizes imaging technologies used with AlGaN FPAs in recent years. Benefiting from the development of AlGaN materials and optoelectronic devices, solar-blind UV detection technology is greeted with significant revolutions. Summarizing recent advances in the processing and properties of AlGaN-based solar-blind UV PDs and FPAs as well as AlGaN growth and doping techniques.
日盲紫外（UV）光电探测器（PD）在环境、工业、军事和生物领域引起了极大关注。作为一种典型的III族氮化物材料，AlGaN合金因其优异的性能，如用于本征紫外探测的可调宽带隙，在日盲探测领域具有广阔的发展前景。近几十年来，人们开发了各种基于AlGaN的光电探测器，以实现高精度的日盲紫外探测。随着集成光电子技术的进步，基于AlGaN的焦平面阵列（FPA）被制造出来，并展现出出色的日盲成像能力。考虑到AlGaN探测技术的快速发展，本文全面综述了基于AlGaN的日盲紫外光电探测器和焦平面阵列的研究进展。首先，介绍了AlGaN的基本物理性质。然后讨论了AlGaN合金的外延和p型掺杂问题。展示了包括光电导体、肖特基、金属-半导体-金属（MSM）、p-i-n和雪崩光电二极管（APD）在内的各种光电探测器，并分析了其物理机制以提高器件性能。此外，本文总结了近年来与AlGaN焦平面阵列一起使用的成像技术。受益于AlGaN材料和光电器件的发展，日盲紫外探测技术迎来了重大变革。总结了基于AlGaN的日盲紫外光电探测器和焦平面阵列在工艺和性能方面的最新进展，以及AlGaN生长和掺杂技术。
