Kim Dong Chan, Park Hamin
Department of Chemical, Biological, and Battery Engineering, Gachon University, Seongnam 13120, Republic of Korea.
Department of Semiconductor Engineering, Gachon University, Seongnam 13120, Republic of Korea.
Sensors (Basel). 2025 Jan 27;25(3):759. doi: 10.3390/s25030759.
Ultraviolet (UV) photodetectors play a crucial role in various applications, ranging from environmental monitoring to biomedical diagnostics. This paper presents the fabrication and characterization of a high-performance UV photodetector using hexagonal boron nitride (hBN) decorated with gold nanoparticles (AuNPs). The hBN flakes were mechanically exfoliated onto SiO substrates, and AuNPs were formed via thermal evaporation, resulting in the creation of a plasmonically active surface that enhanced light absorption and carrier dynamics. Raman spectroscopy, transmission electron microscopy, and electrical measurements were performed to comprehensively analyze the device structure and performance. The photodetector exhibited significantly improved photocurrent and responsivity under UV-B (306 nm) and UV-C (254 nm) illumination, with the responsivity reaching an increase of nearly two orders of magnitude compared to that of the pristine hBN device. These improvements are attributed to the synergistic effects of the wide bandgap of hBN and the localized surface plasmon resonance of the AuNPs. These findings demonstrate the potential of AuNP-decorated hBN for advanced UV photodetection applications and provide a pathway toward more efficient and miniaturized optoelectronic devices.
紫外（UV）光电探测器在从环境监测到生物医学诊断等各种应用中发挥着关键作用。本文介绍了一种使用装饰有金纳米颗粒（AuNPs）的六方氮化硼（hBN）制备高性能紫外光电探测器及其特性。将hBN薄片机械剥离到SiO衬底上，并通过热蒸发形成AuNPs，从而创建了一个等离子体活性表面，增强了光吸收和载流子动力学。进行了拉曼光谱、透射电子显微镜和电学测量，以全面分析器件结构和性能。该光电探测器在UV-B（306 nm）和UV-C（254 nm）光照下表现出显著改善的光电流和响应度，与原始hBN器件相比，响应度提高了近两个数量级。这些改进归因于hBN的宽带隙和AuNPs的局域表面等离子体共振的协同效应。这些发现证明了AuNP修饰的hBN在先进紫外光探测应用中的潜力，并为实现更高效、小型化的光电器件提供了一条途径。
