Mustapha Ademola Akeem, Sanduleanu Mihai
Electrical Engineering and Computer Science Department, Khalifa University of Science and Technology, Abu Dhabi P.O. Box 127788, United Arab Emirates.
System on Chip Center, Khalifa University, Abu Dhabi P.O. Box 127788, United Arab Emirates.
Micromachines (Basel). 2023 May 2;14(5):993. doi: 10.3390/mi14050993.
This paper presents a 160 GHz, D-band, low-noise amplifier (LNA) and a D-band power amplifier (PA) implemented in the Global Foundries 22 nm CMOS FDSOI. The two designs are used for the contactless monitoring of vital signs in the D-band. The LNA is based on multiple stages of a cascode amplifier topology with a common source topology adopted as the input and output stages. The input stage of the LNA is designed for simultaneous input and output matching, while the inter-stage-matching networks are designed for maximizing the voltage swing. The LNA achieved a maximum gain of 17 dB at 163 GHz. The input return loss was quite poor in the 157-166 GHz frequency band. The -3 dB gain bandwidth corresponded to 157-166 GHz. The measured noise figure was between 7.6 dB and 8 dB within the -3 dB gain bandwidth. The power amplifier achieved an output 1 dB compression point of 6.8 dBm at 159.75 GHz. The measured power consumptions of the LNA and the PA were 28.8 mW and 10.8 mW, respectively.
本文介绍了一款采用Global Foundries 22 nm CMOS FDSOI工艺实现的160 GHz D波段低噪声放大器(LNA)和D波段功率放大器(PA)。这两种设计用于D波段生命体征的非接触式监测。LNA基于多级共源共栅放大器拓扑结构,输入和输出级采用共源拓扑结构。LNA的输入级设计用于同时实现输入和输出匹配,而级间匹配网络则设计用于最大化电压摆幅。LNA在163 GHz时实现了17 dB的最大增益。在157 - 166 GHz频段内,输入回波损耗相当差。-3 dB增益带宽对应于157 - 166 GHz。在-3 dB增益带宽内,测得的噪声系数在7.6 dB至8 dB之间。功率放大器在159.75 GHz时实现了6.8 dBm的输出1 dB压缩点。测得的LNA和PA的功耗分别为28.8 mW和10.8 mW。