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一种采用硅锗技术用于5G毫米波应用的20 - 44 GHz宽带低噪声放大器设计。

A 20-44 GHz Wideband LNA Design Using the SiGe Technology for 5G Millimeter-Wave Applications.

作者信息

Balani Warsha, Sarvagya Mrinal, Ali Tanweer, Samasgikar Ajit, Kumar Pradeep, Pathan Sameena, Pai M M Manohara

机构信息

School of Electronics and Communication Engineering, Reva University, Bangalore 560064, India.

Department of Electronics and Communication Engineering, Manipal Institute of Technology, Manipal Academy of Higher Education, Manipal 576104, India.

出版信息

Micromachines (Basel). 2021 Dec 7;12(12):1520. doi: 10.3390/mi12121520.

DOI:10.3390/mi12121520
PMID:34945370
原文链接:https://pmc.ncbi.nlm.nih.gov/articles/PMC8704747/
Abstract

This paper presents the design and implementation of a low-noise amplifier (LNA) for millimeter-wave (mm-Wave) 5G wireless applications. The LNA was based on a common-emitter configuration with cascode amplifier topology using an IHP's 0.13 μm Silicon Germanium (SiGe) heterojunction bipolar transistor (HBT) whose f_T/f_MAX/gate-delay is 360/450 GHz/2.0 ps, utilizing transmission lines for simultaneous noise and input matching. A noise figure of 3.02-3.4 dB was obtained for the entire wide bandwidth from 20 to 44 GHz. The designed LNA exhibited a gain (S_21) greater than 20 dB across the 20-44 GHz frequency range and dissipated 9.6 mW power from a 1.2 V supply. The input reflection coefficient (S_11) and output reflection coefficient (S_22) were below -10 dB, and reverse isolation (S_12) was below -55 dB for the 20-44 GHz frequency band. The input 1 dB (P1dB) compression point of -18 dBm at 34.5 GHz was obtained. The proposed LNA occupies only a 0.715 mm area, with input and output RF (Radio Frequency) bond pads. To the authors' knowledge, this work evidences the lowest noise figure, lowest power consumption with reasonable highest gain, and highest bandwidth attained so far at this frequency band in any silicon-based technology.

摘要

本文介绍了一种用于毫米波5G无线应用的低噪声放大器（LNA）的设计与实现。该LNA基于共发射极配置，采用共源共栅放大器拓扑结构，使用了IHP公司的0.13μm硅锗（SiGe）异质结双极晶体管（HBT），其特征频率f_T/最高振荡频率f_MAX/栅极延迟为360/450GHz/2.0ps，并利用传输线实现同时噪声和输入匹配。在20至44GHz的整个宽带宽范围内，获得了3.02 - 3.4dB的噪声系数。所设计的LNA在20 - 44GHz频率范围内呈现出大于20dB的增益（S_21），从1.2V电源汲取9.6mW的功率。对于20 - 44GHz频段，输入反射系数（S_11）和输出反射系数（S_22）均低于 - 10dB，反向隔离（S_12）低于 - 55dB。在34.5GHz处获得了 - 18dBm的输入1dB（P1dB）压缩点。所提出的LNA仅占用0.715mm²的面积，并带有输入和输出射频（RF）键合焊盘。据作者所知，这项工作证明了在任何基于硅的技术中，该频段目前实现了最低的噪声系数、合理的最高增益下的最低功耗以及最高的带宽。

https://cdn.ncbi.nlm.nih.gov/pmc/blobs/9c33/8704747/c6422218d81f/micromachines-12-01520-g015.jpg
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https://cdn.ncbi.nlm.nih.gov/pmc/blobs/9c33/8704747/3007943a502a/micromachines-12-01520-g010a.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/9c33/8704747/d2f860cdfd51/micromachines-12-01520-g011.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/9c33/8704747/54a162d91564/micromachines-12-01520-g012.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/9c33/8704747/760f04c4f14c/micromachines-12-01520-g013.jpg
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https://cdn.ncbi.nlm.nih.gov/pmc/blobs/9c33/8704747/3455151c1643/micromachines-12-01520-g009a.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/9c33/8704747/3007943a502a/micromachines-12-01520-g010a.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/9c33/8704747/d2f860cdfd51/micromachines-12-01520-g011.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/9c33/8704747/54a162d91564/micromachines-12-01520-g012.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/9c33/8704747/760f04c4f14c/micromachines-12-01520-g013.jpg
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https://cdn.ncbi.nlm.nih.gov/pmc/blobs/9c33/8704747/c6422218d81f/micromachines-12-01520-g015.jpg

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