Division of Electronics and Electrical Engineering, Dongguk University, Seoul 04620, Republic of Korea.
Yongin Research Institute, Hanwha Systems, Yongin-si 17121, Republic of Korea.
Sensors (Basel). 2023 May 17;23(10):4840. doi: 10.3390/s23104840.
This paper describes Monolithic Microwave Integrated Circuits (MMICs) for an X-band radar transceiver front-end implemented in 0.25 μm GaN High Electron Mobility Transistor (HEMT) technology. Two versions of single pole double throw (SPDT) T/R switches are introduced to realize a fully GaN-based transmit/receive module (TRM), each of which achieves an insertion loss of 1.21 dB and 0.66 dB at 9 GHz, IP higher than 46.3 dBm and 44.7 dBm, respectively. Therefore, it can substitute a lossy circulator and limiter used for a conventional GaAs receiver. A driving amplifier (DA), a high-power amplifier (HPA), and a robust low-noise amplifier (LNA) are also designed and verified for a low-cost X-band transmit-receive module (TRM). For the transmitting path, the implemented DA achieves a saturated output power () of 38.0 dBm and output 1-dB compression (OP) of 25.84 dBm. The HPA reaches a of 43.0 dBm and power-added efficiency (PAE) of 35.6%. For the receiving path, the fabricated LNA measures a small-signal gain of 34.9 dB and a noise figure of 2.56 dB, and it can endure higher than 38 dBm input power in the measurement. The presented GaN MMICs can be useful in implementing a cost-effective TRM for Active Electronically Scanned Array (AESA) radar systems at X-band.
本文介绍了采用 0.25μm GaN 高电子迁移率晶体管 (HEMT) 技术实现的 X 波段雷达收发前端单片微波集成电路 (MMIC)。介绍了两种单刀双掷 (SPDT) T/R 开关，以实现完全基于 GaN 的发射/接收模块 (TRM)，每个开关在 9GHz 时的插入损耗分别为 1.21dB 和 0.66dB，IP 分别高于 46.3dBm 和 44.7dBm。因此，它可以替代用于传统 GaAs 接收机的损耗环行器和限幅器。还设计并验证了用于低成本 X 波段收发模块 (TRM) 的驱动放大器 (DA)、高功率放大器 (HPA) 和稳健的低噪声放大器 (LNA)。对于发射路径，实现的 DA 达到 38.0dBm 的饱和输出功率 () 和 25.84dBm 的输出 1dB 压缩 (OP)。HPA 达到 43.0dBm 的 和 35.6%的功率附加效率 (PAE)。对于接收路径，制造的 LNA 测量到 34.9dB 的小信号增益和 2.56dB 的噪声系数，并且在测量中可以承受高于 38dBm 的输入功率。所提出的 GaN MMIC 可用于在 X 波段实现具有成本效益的有源电子扫描阵列 (AESA)雷达系统的收发模块。
