利用石英舟中的低成核密度区域在铜箔上合成单晶石墨烯。

Synthesis of Single-Crystal Graphene on Copper Foils Using a Low-Nucleation-Density Region in a Quartz Boat.

作者信息

Yang Kaiqiang, Liu Jianlong, Jiang Ruirui, Gong Yubin, Zeng Baoqing, Yi Zichuan, Gao Qingguo, Yang Jianjun, Chi Feng, Liu Liming

机构信息

School of Electronic Science and Engineering, University of Electronic Science and Technology of China, Chengdu 610054, China.

Zhongshan Branch of State Key Laboratory of Electronic Thin Films and Integrated Devices, Zhongshan Institute, University of Electronic Science and Technology of China, Zhongshan 528402, China.

出版信息

Micromachines (Basel). 2021 Oct 12;12(10):1236. doi: 10.3390/mi12101236.

DOI:10.3390/mi12101236

PMID:34683288

原文链接:https://pmc.ncbi.nlm.nih.gov/articles/PMC8539397/

Abstract

The nucleation of graphene at different locations in the quartz boat was studied, and the lowest nucleation density of graphene in the quartz boat was found. The nucleation density of graphene is the lowest at the bottom of the quartz boat near the gas inlet side. Based on the above results, a simple and reproducible way is proposed to significantly suppress the nucleation density of graphene on the copper foil during the chemical vapor deposition process. Placing the copper foil with an area of 1.3 cm × 1 cm in the middle of the bottom of the quartz boat or further back, and placing two copper pockets in front of the copper foil, an ultra-low nucleation density of ~42 nucleus/cm was achieved on the back of the copper foil. Single-crystal monolayer graphene with a lateral size of 800 μm can be grown on the back of copper foils after 60 min of growth. Raman spectroscopy revealed the single-crystal graphene to be in uniform monolayers with a low D-band intensity.

摘要

研究了石墨烯在石英舟不同位置的成核情况，发现了石英舟中石墨烯的最低成核密度。石墨烯的成核密度在靠近进气侧的石英舟底部最低。基于上述结果，提出了一种简单且可重复的方法，以在化学气相沉积过程中显著抑制铜箔上石墨烯的成核密度。将面积为1.3 cm×1 cm的铜箔放置在石英舟底部中间或更靠后的位置，并在铜箔前方放置两个铜袋，在铜箔背面实现了约42个核/cm的超低成核密度。生长60分钟后，可在铜箔背面生长出横向尺寸为800μm的单晶单层石墨烯。拉曼光谱显示该单晶石墨烯为均匀的单层，D带强度较低。