柔性衬底上单层二硫化钼中的应变弛豫

Strain relaxation in monolayer MoS over flexible substrate.

作者信息

Basu Nilanjan, Kumar Ravindra, Manikandan D, Ghosh Dastidar Madhura, Hedge Praveen, Nayak Pramoda K, Bhallamudi Vidya Praveen

机构信息

Department of Physics, Indian Institute of Technology Madras Chennai 600 036 India

2D Materials Research and Innovation Group, Indian Institute of Technology Madras Chennai 600 036 India.

出版信息

RSC Adv. 2023 May 31;13(24):16241-16247. doi: 10.1039/d3ra01381b. eCollection 2023 May 30.

DOI:10.1039/d3ra01381b

PMID:37266495

原文链接:https://pmc.ncbi.nlm.nih.gov/articles/PMC10230350/

Abstract

In this communication, we demonstrate uniaxial strain relaxation in monolayer (1L) MoS transpires through cracks in both single and double-grain flakes. Chemical vapour deposition (CVD) grown 1L MoS has been transferred onto polyethylene terephthalate (PET) and poly(dimethylsiloxane) (PDMS) substrates for low (∼1%) and high (1-6%) strain measurements. Both Raman and photoluminescence (PL) spectroscopy revealed strain relaxation cracks in the strain regime of 4-6%. optical micrographs show the formation of large micron-scale cracks along the strain axis and atomic force microscopy (AFM) images reveal the formation of smaller lateral cracks due to the strain relaxation. Finite element simulation has been employed to estimate the applied strain efficiency as well as to simulate the strain distribution for MoS flakes. The present study reveals the uniaxial strain relaxation mechanism in 1L MoS and paves the way for exploring strain relaxation in other transition metal dichalcogenides (TMDCs) as well as their heterostructures.

摘要

在本通讯中，我们证明了单层（1L）二硫化钼（MoS）中的单轴应变弛豫通过单晶和双晶薄片中的裂纹发生。通过化学气相沉积（CVD）生长的1L MoS已转移到聚对苯二甲酸乙二醇酯（PET）和聚二甲基硅氧烷（PDMS）基板上，用于低（~1%）和高（1-6%）应变测量。拉曼光谱和光致发光（PL）光谱均显示在4-6%的应变范围内存在应变弛豫裂纹。光学显微镜照片显示沿应变轴形成了大的微米级裂纹，原子力显微镜（AFM）图像揭示了由于应变弛豫而形成的较小横向裂纹。有限元模拟已用于估计施加的应变效率以及模拟MoS薄片的应变分布。本研究揭示了1L MoS中的单轴应变弛豫机制，并为探索其他过渡金属二硫属化物（TMDCs）及其异质结构中的应变弛豫铺平了道路。