Deanship of Scientific Research, King Abdulaziz University, Jeddah 21589, Saudi Arabia.
Nanomaterials and Nanotechnology Department, Advanced Materials Institute, Central Metallurgical R&D Institute (CMRDI), P.O. Box 87 Helwan, 11421 Cairo, Egypt.
J Colloid Interface Sci. 2023 Oct 15;648:348-356. doi: 10.1016/j.jcis.2023.05.201. Epub 2023 Jun 3.
Photocatalytic oxidation of antibiotic waste over semiconducting heterojunction photocatalysts is considered eco-friendly because it is simple and operates under light irradiation. In this work, we apply a solvothermal-based process for obtaining high surface area barium stannate (BaSnO) nanosheets followed by adding 3.0-12.0 wt% of spinel copper manganate (CuMnO) nanoparticles to form n-n CuMnO/BaSnO heterojunction photocatalyst after calcination process. The CuMnO-supported BaSnO nanosheets exhibit mesostructure surfaces with a high surface area range of 133-150 mg. Moreover, introducing CuMnO to BaSnO shows a significant broadening in visible light absorption range due to bandgap reduction down to 2.78 eV in 9.0% CuMnO/BaSnO compared to 3.0 eV for pure BaSnO. The produced CuMnO/BaSnO is used for photooxidation of tetracycline (TC) in water as emerging antibiotic waste under visible light. The photooxidation of TC exhibits the first-order reaction model. The specific dose of 9.0 wt% CuMnO/BaSnO at 2.4 gL displays the highest-performed and recyclable photocatalyst for total oxidation of TC after 90 min. This sustainable photoactivity is attributed to the improved light harvesting and charges migration upon coupling between CuMnO and BaSnO.
半导体异质结光催化剂用于抗生素废水的光催化氧化被认为是环保的,因为它简单且在光照下运行。在这项工作中,我们应用溶剂热法获得具有高比表面积的钡锡矿(BaSnO)纳米片,然后在煅烧过程中添加 3.0-12.0wt%的尖晶石铜锰氧化物(CuMnO)纳米颗粒,形成 n-n CuMnO/BaSnO 异质结光催化剂。CuMnO 负载的 BaSnO 纳米片具有介孔表面,比表面积范围为 133-150mg。此外,将 CuMnO 引入 BaSnO 会由于能带隙降低至 9.0%CuMnO/BaSnO 中的 2.78eV,与纯 BaSnO 的 3.0eV 相比,在可见光吸收范围内显示出明显的拓宽。所制备的 CuMnO/BaSnO 用于水中的四环素(TC)的光氧化,作为新兴的抗生素废水。TC 的光氧化符合一级反应模型。在 90min 后,2.4gL 的 9.0wt%CuMnO/BaSnO 的特定剂量显示出最高性能和可回收的 TC 总氧化光催化剂。这种可持续的光活性归因于 CuMnO 和 BaSnO 之间耦合后光捕获和电荷迁移的改善。