• 文献检索
  • 文档翻译
  • 深度研究
  • 学术资讯
  • Suppr Zotero 插件Zotero 插件
  • 邀请有礼
  • 套餐&价格
  • 历史记录
应用&插件
Suppr Zotero 插件Zotero 插件浏览器插件Mac 客户端Windows 客户端微信小程序
定价
高级版会员购买积分包购买API积分包
服务
文献检索文档翻译深度研究API 文档MCP 服务
关于我们
关于 Suppr公司介绍联系我们用户协议隐私条款
关注我们

Suppr 超能文献

核心技术专利:CN118964589B侵权必究
粤ICP备2023148730 号-1Suppr @ 2026

文献检索

告别复杂PubMed语法,用中文像聊天一样搜索,搜遍4000万医学文献。AI智能推荐,让科研检索更轻松。

立即免费搜索

文件翻译

保留排版,准确专业,支持PDF/Word/PPT等文件格式,支持 12+语言互译。

免费翻译文档

深度研究

AI帮你快速写综述,25分钟生成高质量综述,智能提取关键信息,辅助科研写作。

立即免费体验

静电门控对少层二硫化钼中电子输运和界面电荷转移动力学的解耦效应

Decoupling Effects of Electrostatic Gating on Electronic Transport and Interfacial Charge-Transfer Kinetics at Few-Layer Molybdenum Disulfide.

作者信息

Maroo Sonal, Yu Yun, Taniguchi Takashi, Watanabe Kenji, Bediako D Kwabena

机构信息

Department of Chemistry, University of California, Berkeley, California 94720, United States.

International Center for Materials Nanoarchitectonics and Research Center for Functional Materials, National Institute for Materials Science, Tsukuba 305-0044, Japan.

出版信息

ACS Nanosci Au. 2023 Feb 20;3(3):204-210. doi: 10.1021/acsnanoscienceau.2c00064. eCollection 2023 Jun 21.

DOI:10.1021/acsnanoscienceau.2c00064
PMID:37360849
原文链接:https://pmc.ncbi.nlm.nih.gov/articles/PMC10288603/
Abstract

The electronic properties of electrode materials play a crucial role in defining their electrochemical behavior in energy conversion and storage devices. The assembly of van der Waals heterostructures and fabrication into mesoscopic devices enable the dependence of an electrochemical response on electronic properties to be systematically interrogated. Here, we evaluate the effect of charge carrier concentration on heterogeneous electron transfer at few-layer MoS electrodes by combining spatially resolved electrochemical measurements with field-effect electrostatic manipulation of band alignment. Steady-state cyclic voltammograms and finite-element simulations reveal a strong modulation of the measured electrochemical response for outer-sphere charge transfer at the electrostatic gate voltage. In addition, spatially resolved voltammetric responses, obtained at a series of locations at the surface of few-layer MoS, reveal the governing role of in-plane charge transport on the electrochemical behavior of 2D electrodes, especially under conditions of low carrier densities.

摘要

电极材料的电子特性在决定其在能量转换和存储设备中的电化学行为方面起着至关重要的作用。范德华异质结构的组装以及将其制备成介观器件,使得能够系统地研究电化学响应与电子特性之间的相关性。在此,我们通过将空间分辨电化学测量与能带排列的场效应静电操纵相结合,评估了电荷载流子浓度对少层MoS电极上异质电子转移的影响。稳态循环伏安图和有限元模拟表明,在静电栅极电压下,测量到的外层电荷转移的电化学响应受到强烈调制。此外,在少层MoS表面一系列位置获得的空间分辨伏安响应表明,面内电荷传输对二维电极的电化学行为起主导作用,尤其是在低载流子密度条件下。

https://cdn.ncbi.nlm.nih.gov/pmc/blobs/20d8/10288603/6b17c9e21559/ng2c00064_0004.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/20d8/10288603/28166a1a4de6/ng2c00064_0001.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/20d8/10288603/f8ea6278286f/ng2c00064_0002.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/20d8/10288603/ff7e06d0d1cc/ng2c00064_0003.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/20d8/10288603/6b17c9e21559/ng2c00064_0004.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/20d8/10288603/28166a1a4de6/ng2c00064_0001.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/20d8/10288603/f8ea6278286f/ng2c00064_0002.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/20d8/10288603/ff7e06d0d1cc/ng2c00064_0003.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/20d8/10288603/6b17c9e21559/ng2c00064_0004.jpg

相似文献

1
Decoupling Effects of Electrostatic Gating on Electronic Transport and Interfacial Charge-Transfer Kinetics at Few-Layer Molybdenum Disulfide.静电门控对少层二硫化钼中电子输运和界面电荷转移动力学的解耦效应
ACS Nanosci Au. 2023 Feb 20;3(3):204-210. doi: 10.1021/acsnanoscienceau.2c00064. eCollection 2023 Jun 21.
2
Field Effect Modulation of Heterogeneous Charge Transfer Kinetics at Back-Gated Two-Dimensional MoS Electrodes.背栅二维 MoS 电极中异质电荷转移动力学的场效应调制。
Nano Lett. 2017 Dec 13;17(12):7586-7592. doi: 10.1021/acs.nanolett.7b03564. Epub 2017 Nov 21.
3
Charge Storage of Isolated Monolayer Molybdenum Disulfide in Epitaxially Grown MoS/Graphene Heterostructures for Memory Device Applications.用于存储器件应用的外延生长MoS/石墨烯异质结构中孤立单层二硫化钼的电荷存储
ACS Appl Mater Interfaces. 2021 Sep 29;13(38):45864-45869. doi: 10.1021/acsami.1c12064. Epub 2021 Sep 14.
4
Interfacial Charge Transfer and Gate-Induced Hysteresis in Monochalcogenide InSe/GaSe Heterostructures.单硫属化物InSe/GaSe异质结构中的界面电荷转移与栅极诱导滞后现象
ACS Appl Mater Interfaces. 2020 Oct 14;12(41):46854-46861. doi: 10.1021/acsami.0c09635. Epub 2020 Oct 5.
5
Enhanced Photoluminescence of Multiple Two-Dimensional van der Waals Heterostructures Fabricated by Layer-by-Layer Oxidation of MoS.通过对二硫化钼进行逐层氧化制备的多种二维范德华异质结构的增强光致发光
ACS Appl Mater Interfaces. 2021 Jan 13;13(1):1245-1252. doi: 10.1021/acsami.0c18364. Epub 2020 Dec 23.
6
Strain forces tuned the electronic and optical properties in GaTe/MoS van der Waals heterostructures.应变力调控了碲化镓/二硫化钼范德华异质结构中的电学和光学性质。
RSC Adv. 2020 Jul 2;10(42):25136-25142. doi: 10.1039/d0ra04643d. eCollection 2020 Jun 29.
7
Charge Transport in MoS/WSe van der Waals Heterostructure with Tunable Inversion Layer.MoS/WSe 范德瓦尔斯异质结构中的电荷输运与可调反型层
ACS Nano. 2017 Apr 25;11(4):3832-3840. doi: 10.1021/acsnano.7b00021. Epub 2017 Mar 20.
8
Photoelectrochemistry of Pristine Mono- and Few-Layer MoS2.体相 MoS2 的光电化学
Nano Lett. 2016 Mar 9;16(3):2023-32. doi: 10.1021/acs.nanolett.5b05317. Epub 2016 Feb 10.
9
Tunable Electron and Hole Injection Enabled by Atomically Thin Tunneling Layer for Improved Contact Resistance and Dual Channel Transport in MoS/WSe van der Waals Heterostructure.原子层薄隧道层实现可调谐的电子和空穴注入,改善 MoS/WSe 范德瓦尔斯异质结的接触电阻和双通道输运
ACS Appl Mater Interfaces. 2018 Jul 18;10(28):23961-23967. doi: 10.1021/acsami.8b05549. Epub 2018 Jul 3.
10
Interfacial Interactions in Monolayer and Few-Layer SnS/CH NH PbI Perovskite van der Waals Heterostructures and Their Effects on Electronic and Optical Properties.单层和少层SnS/CH₃NH₃PbI₃钙钛矿范德华异质结构中的界面相互作用及其对电子和光学性质的影响。
Chemphyschem. 2018 Feb 5;19(3):291-299. doi: 10.1002/cphc.201701108. Epub 2017 Dec 28.

本文引用的文献

1
Electrolyte-gated transistors for enhanced performance bioelectronics.用于增强性能生物电子学的电解质门控晶体管。
Nat Rev Methods Primers. 2021;1. doi: 10.1038/s43586-021-00065-8. Epub 2021 Oct 7.
2
Tunable angle-dependent electrochemistry at twisted bilayer graphene with moiré flat bands.具有莫尔平带的扭曲双层石墨烯中的可调角度依赖电化学。
Nat Chem. 2022 Mar;14(3):267-273. doi: 10.1038/s41557-021-00865-1. Epub 2022 Feb 17.
3
The Critical Role of Electrolyte Gating on the Hydrogen Evolution Performance of Monolayer MoS.电解质门控对单层MoS析氢性能的关键作用
Nano Lett. 2019 Nov 13;19(11):8118-8124. doi: 10.1021/acs.nanolett.9b03337. Epub 2019 Oct 7.
4
Self-gating in semiconductor electrocatalysis.半导体电催化中的自门控
Nat Mater. 2019 Oct;18(10):1098-1104. doi: 10.1038/s41563-019-0426-0. Epub 2019 Jul 22.
5
Visualizing electrostatic gating effects in two-dimensional heterostructures.可视化二维异质结构中的静电门控效应。
Nature. 2019 Aug;572(7768):220-223. doi: 10.1038/s41586-019-1402-1. Epub 2019 Jul 17.
6
Approaching the Intrinsic Limit in Transition Metal Diselenides via Point Defect Control.通过点缺陷控制逼近过渡金属二硒化物的本征极限
Nano Lett. 2019 Jul 10;19(7):4371-4379. doi: 10.1021/acs.nanolett.9b00985. Epub 2019 Jun 10.
7
Continuous and Reversible Tuning of Electrochemical Reaction Kinetics on Back-Gated 2D Semiconductor Electrodes: Steady-State Analysis Using a Hydrodynamic Method.背栅二维半导体电极上电化学反应动力学的连续可逆调谐:采用流体动力学方法的稳态分析
Anal Chem. 2019 Jan 15;91(2):1627-1635. doi: 10.1021/acs.analchem.8b05216. Epub 2019 Jan 3.
8
Selective increase in CO electroreduction activity at grain-boundary surface terminations.晶界表面终止处 CO 电还原活性的选择性增加。
Science. 2017 Dec 1;358(6367):1187-1192. doi: 10.1126/science.aao3691.
9
Field Effect Modulation of Heterogeneous Charge Transfer Kinetics at Back-Gated Two-Dimensional MoS Electrodes.背栅二维 MoS 电极中异质电荷转移动力学的场效应调制。
Nano Lett. 2017 Dec 13;17(12):7586-7592. doi: 10.1021/acs.nanolett.7b03564. Epub 2017 Nov 21.
10
Nanoscale Structure Dynamics within Electrocatalytic Materials.电催化材料中的纳米结构动力学。
J Am Chem Soc. 2017 Nov 22;139(46):16813-16821. doi: 10.1021/jacs.7b09355. Epub 2017 Nov 8.