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纳米芘薄膜上宽带自旋电子学的化学方法

Chemical Approach Towards Broadband Spintronics on Nanoscale Pyrene Films.

作者信息

Gupta Ritu, Pradhan Jhantu, Haldar Arabinda, Murapaka Chandrasekhar, Chandra Mondal Prakash

机构信息

Department of Chemistry, Indian Institute of Technology Kanpur, Uttar Pradesh, 208016, India.

Department of Physics, Indian Institute of Technology Hyderabad, Kandi-502285, Telangana, India.

出版信息

Angew Chem Int Ed Engl. 2023 Aug 28;62(35):e202307458. doi: 10.1002/anie.202307458. Epub 2023 Jul 19.

DOI:10.1002/anie.202307458
PMID:37363873
Abstract

The injection of pure spin current into the non-magnetic layer plays a crucial role in transmitting, processing, and storing data information in the realm of spintronics. To understand broadband molecular spintronics, pyrene oligomer film (≈20 nm thickness) was prepared using an electrochemical method forming indium tin oxide (ITO) electrode/pyrene covalent interfaces. Permalloy (Ni Fe ) films with different nanoscale thicknesses were used as top contact over ITO/pyrene layers to estimate the spin pumping efficiency across the interfaces using broadband ferromagnetic resonance spectra. The spintronic devices are composed of permalloy/pyrene/ITO orthogonal configuration, showing remarkable spin pumping from permalloy to pyrene film. The large spin pumping is evident from the linewidth broadening of 5.4 mT at 9 GHz, which is direct proof of spin angular momentum transfer across the interface. A striking observation is made with the high spin-mixing conductance of ≈1.02×10  m , a value comparable to the conventional heavy metals. Large spin angular moment transfer was observed at the permalloy-pyrene interfaces, especially at the lower thickness of permalloy, indicating a strong spinterface effect. Pure spin current injection from ferromagnetic into electrochemically grown pyrene films ensures efficient broadband spin transport, which opens a new area in molecular broadband spintronics.

摘要

将纯自旋电流注入非磁性层在自旋电子学领域的数据传输、处理和存储中起着至关重要的作用。为了理解宽带分子自旋电子学,采用电化学方法制备了芘低聚物薄膜(厚度约20 nm),形成氧化铟锡(ITO)电极/芘共价界面。使用不同纳米级厚度的坡莫合金(Ni Fe)薄膜作为ITO/芘层上的顶部接触,以利用宽带铁磁共振光谱估计跨界面的自旋泵浦效率。自旋电子器件由坡莫合金/芘/ITO正交配置组成,显示出从坡莫合金到芘薄膜的显著自旋泵浦。在9 GHz时线宽展宽5.4 mT,这表明存在大的自旋泵浦,这是自旋角动量跨界面转移的直接证据。一个引人注目的观察结果是,其具有约1.02×10  m的高自旋混合电导,该值与传统重金属相当。在坡莫合金-芘界面观察到了大的自旋角动量转移,特别是在坡莫合金厚度较低时,这表明存在强的自旋界面效应。从铁磁体向电化学生长的芘薄膜注入纯自旋电流可确保高效的宽带自旋传输,这为分子宽带自旋电子学开辟了一个新领域。

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