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作为片上储能分子结的电化学接枝分子层

Electrochemically grafted molecular layers as on-chip energy storage molecular junctions.

作者信息

Kaur Rajwinder, Malik Ankur, Gupta Ritu, Kumari Kusum, Singh Saurabh Kumar, Bueno Paulo Roberto, Chandra Mondal Prakash

机构信息

Department of Chemistry, Indian Institute of Technology Kanpur Uttar Pradesh 208 016 India

Department of Chemistry, Indian Institute of Technology Hyderabad Kandi Telangana 502 285 India.

出版信息

Chem Sci. 2025 Jan 13;16(8):3560-3570. doi: 10.1039/d4sc04745a. eCollection 2025 Feb 19.

DOI:10.1039/d4sc04745a
PMID:39867959
原文链接:https://pmc.ncbi.nlm.nih.gov/articles/PMC11756557/
Abstract

Molecular junctions (MJs) are celebrated nanoelectronic devices for mimicking conventional electronic functions, including rectifiers, sensors, wires, switches, transistors, negative differential resistance, and memory, following an understanding of charge transport mechanisms. However, capacitive nanoscale molecular junctions are rarely seen. The present work describes electrochemically (E-Chem) grown covalently attached molecular thin films of 10, 14.3, and 18.6 nm thickness using benzimidazole (BENZ) diazonium salts on ITO electrodes on a quartz substrate upon which 50 nm of aluminum (Al) top contact was deposited to fabricate large-scale (area = 500 × 500 μm) molecular junctions. The capacitance of the molecular junctions decreases with increasing thickness of molecular layers, a behavior attributed to a classical dielectric role in which the geometric capacitance of the device within a uniform dielectric component is expected to decrease with increasing thickness. An electrical dipole moment in BENZ oligomers enhances polarizability; hence, the dielectric constant of the medium leads to an increase in the capacitance of MJs, which reaches a maximum value of ∼53 μF cm for a junction of 10 nm molecular film thickness. In addition to direct-current (DC) electrical measurements, and computational studies, we performed alternating current (AC)-based electrical measurements to understand the frequency response of molecular junctions. Our present study demonstrates that BENZ-based molecular junctions behave as classical organic capacitors and could be a suitable building block for nanoscale on-chip energy storage devices.

摘要

分子结(MJs)是备受瞩目的纳米电子器件,用于模仿传统电子功能,包括整流器、传感器、导线、开关、晶体管、负微分电阻和存储器等,这是基于对电荷传输机制的理解。然而,电容性纳米级分子结却很少见。本工作描述了在石英衬底上的氧化铟锡(ITO)电极上,使用苯并咪唑(BENZ)重氮盐通过电化学(E-Chem)生长共价连接的分子薄膜,其厚度分别为10、14.3和18.6纳米,在该电极上沉积了50纳米厚的铝(Al)顶部接触层,以制造大规模(面积 = 500×500μm)的分子结。分子结的电容随着分子层厚度的增加而减小,这种行为归因于经典的介电作用,即在均匀介电成分内,器件的几何电容预计会随着厚度增加而减小。BENZ低聚物中的电偶极矩增强了极化率;因此,介质的介电常数导致分子结电容增加,对于10纳米分子膜厚度的结,其电容最大值达到约53μF/cm²。除了直流(DC)电学测量和计算研究外,我们还进行了基于交流(AC)的电学测量,以了解分子结的频率响应。我们目前的研究表明,基于BENZ的分子结表现为经典的有机电容器,并且可能是纳米级片上储能器件的合适构建模块。

https://cdn.ncbi.nlm.nih.gov/pmc/blobs/6c17/11837268/de5858b65a8f/d4sc04745a-f6.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/6c17/11837268/17d465b08875/d4sc04745a-f1.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/6c17/11837268/bff29750351c/d4sc04745a-f2.jpg
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https://cdn.ncbi.nlm.nih.gov/pmc/blobs/6c17/11837268/bf9e61c35384/d4sc04745a-f4.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/6c17/11837268/299cb72165dc/d4sc04745a-f5.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/6c17/11837268/de5858b65a8f/d4sc04745a-f6.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/6c17/11837268/17d465b08875/d4sc04745a-f1.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/6c17/11837268/bff29750351c/d4sc04745a-f2.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/6c17/11837268/ede408acd5a8/d4sc04745a-f3.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/6c17/11837268/bf9e61c35384/d4sc04745a-f4.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/6c17/11837268/299cb72165dc/d4sc04745a-f5.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/6c17/11837268/de5858b65a8f/d4sc04745a-f6.jpg

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