Institute of Fundamental and Frontier Sciences (IFFS), University of Electronic Science and Technology of China, Chengdu 610054, China.
Institut national de la recherche scientifique (INRS), Centre Énergie Matériaux Télécommunications, 1650 Boul. Lionel Boulet, Varennes J3X 1S2, Canada.
Nanoscale. 2023 Jul 13;15(27):11434-11456. doi: 10.1039/d3nr01311a.
In the past decades, neuromorphic computing has attracted the interest of the scientific community due to its potential to circumvent the von Neumann bottleneck. Organic materials, owing to their fine tunablility and their ability to be used in multilevel memories, represent a promising class of materials to fabricate neuromorphic devices with the key requirement of operation with synaptic weight. In this review, recent studies of organic multilevel memory are presented. The operating principles and the latest achievements obtained with devices exploiting the main approaches to reach multilevel operation are discussed, with emphasis on organic devices using floating gates, ferroelectric materials, polymer electrets and photochromic molecules. The latest results obtained using organic multilevel memories for neuromorphic circuits are explored and the major advantages and drawbacks of the use of organic materials for neuromorphic applications are discussed.
在过去的几十年中，由于有潜力克服冯·诺依曼瓶颈，神经形态计算引起了科学界的兴趣。有机材料由于其可调谐性以及在多级存储器中使用的能力，代表了一类很有前途的材料，可以制造具有突触权重操作关键要求的神经形态器件。在这篇综述中，介绍了有机多级存储器的最新研究。讨论了利用主要方法实现多级操作的器件的工作原理和最新成果，重点介绍了使用浮栅、铁电材料、聚合物电介质和光致变色分子的有机器件。探讨了使用有机多级存储器进行神经形态电路的最新结果，并讨论了有机材料在神经形态应用中的主要优点和缺点。
