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通过盐辅助双管化学气相沉积法生长具有高红外光敏性的少层WTe₂ 。 (注:原文中“WTe”可能有误,推测应为“WTe₂”,已按此进行翻译)

Growth of few-layer WTe by a salt-assisted double-tube chemical vapor deposition method with high infrared photosensitivity.

作者信息

Zhao Zhengui, Dong Fangfei, Wang Yuyan, Sun Jiacheng, Ye Huanyu, Wang Rongming, Zhang Junying

机构信息

School of Physics, Beihang University, Beijing 100191, China.

Beijing National Research Center for Information Science and Technology, Tsinghua University, Beijing 100084, China.

出版信息

Nanoscale. 2023 Jul 20;15(28):11955-11962. doi: 10.1039/d3nr00849e.

Abstract

WTe, as a member of Weyl semimetals, is a vital candidate for the development of broad-wavelength-range photodetectors. At present, the preparation of WTe films mainly depends on the chemical vapor deposition (CVD) method. However, the chemical reactivity between W and Te is low, and the controllable synthesis of large-sized layered WTe in a stoichiometric ratio is the main challenge for further research. Here, we propose a salt-assisted double-tube CVD method for the one-step preparation of high-quality and large-size WTe crystals with a monolayer and few layers. The thickness and lateral dimension of WTe crystals can be effectively tuned by the growth temperature and hydrogen concentration, and the dynamic growth mechanism is understood by the combination of surface reaction and mass transport. Furthermore, a high-performance photodetector based on WTe is fabricated, which has high responsivity of 118 mA W (1550 nm) and 408 mA W (2700 nm) at room temperature, indicating its great potential for application in infrared optoelectronic devices. The results provide a reference for the preparation of 2D materials by CVD and lay the foundation for the fabrication of next-generation optoelectronic devices with a wide-wavelength-range response.

摘要

作为外尔半金属的一员,碲化钨是宽波长范围光电探测器发展的重要候选材料。目前,碲化钨薄膜的制备主要依赖化学气相沉积(CVD)法。然而,钨与碲之间的化学反应活性较低,以化学计量比可控合成大尺寸层状碲化钨是进一步研究的主要挑战。在此,我们提出一种盐辅助双管CVD法,用于一步制备高质量、大尺寸的单层和少层碲化钨晶体。碲化钨晶体的厚度和横向尺寸可通过生长温度和氢气浓度有效调控,通过表面反应和质量传输相结合理解其动态生长机制。此外,制备了基于碲化钨的高性能光电探测器,其在室温下对1550 nm光的响应率高达118 mA/W,对2700 nm光的响应率为408 mA/W,表明其在红外光电器件中具有巨大的应用潜力。这些结果为通过CVD法制备二维材料提供了参考,为制造具有宽波长范围响应的下一代光电器件奠定了基础。

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