Zhang Zheng, Luo Liyang, Zhang Yanlin, Lv Guoliang, Luo Yuanyuan, Duan Guotao
School of Integrated Circuits, Huazhong University of Science and Technology, Wuhan, 430074, China.
Key Laboratory of Materials Physics, Institute of Solid State Physics, HFIPS, Chinese Academy of Sciences, Hefei, 230031, China.
Adv Sci (Weinh). 2023 Sep;10(26):e2302614. doi: 10.1002/advs.202302614. Epub 2023 Jul 3.
In this manuscript, a simple method combining atomic layer deposition and magnetron sputtering is developed to fabricate high-performance Pd/SnO film patterns applied for micro-electro-mechanical systems (MEMS) H sensing chips. SnO film is first accurately deposited in the central areas of MEMS micro hotplate arrays by a mask-assistant method, leading the patterns with wafer-level high consistency in thickness. The grain size and density of Pd nanoparticles modified on the surface of the SnO film are further regulated to obtain an optimized sensing performance. The resulting MEMS H sensing chips show a wide detection range from 0.5 to 500 ppm, high resolution, and good repeatability. Based on the experiments and density functional theory calculations, a sensing enhancement mechanism is also proposed: a certain amount of Pd nanoparticles modified on the SnO surface could bring stronger H adsorption followed by dissociation, diffusion, and reaction with surface adsorbed oxygen species. Obviously, the method provided here is quite simple and effective for the manufacturing of MEMS H sensing chips with high consistency and optimized performance, which may also find broad applications in other MEMS chip technologies.
在本论文中，开发了一种结合原子层沉积和磁控溅射的简单方法，以制造应用于微机电系统（MEMS）氢传感芯片的高性能Pd/SnO薄膜图案。首先通过掩膜辅助法将SnO薄膜精确沉积在MEMS微热板阵列的中心区域，使图案在厚度上具有晶圆级的高一致性。进一步调节修饰在SnO薄膜表面的Pd纳米颗粒的粒径和密度，以获得优化的传感性能。所得的MEMS氢传感芯片显示出0.5至500 ppm的宽检测范围、高分辨率和良好的重复性。基于实验和密度泛函理论计算，还提出了一种传感增强机制：在SnO表面修饰一定量的Pd纳米颗粒可带来更强的氢吸附，随后发生离解、扩散以及与表面吸附的氧物种反应。显然，这里提供的方法对于制造具有高一致性和优化性能的MEMS氢传感芯片非常简单有效，这也可能在其他MEMS芯片技术中找到广泛应用。
