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巨双极单向光磁电阻

Giant bipolar unidirectional photomagnetoresistance.

作者信息

Jiang Yucheng, He Anpeng, Luo Kai, Zhang Jinlei, Liu Guozhen, Zhao Run, Zhang Qing, Wang Zhuo, Zhao Chen, Wang Lin, Qi Yaping, Gao Ju, Loh Kian Ping, Wee Andrew T S, Qiu Cheng-Wei

机构信息

Jiangsu Key Laboratory of Micro and Nano Heat Fluid Flow Technology and Energy Application, School of Physical Science and Technology, Suzhou University of Science and Technology, Suzhou 215009, China.

Department of Applied Physics, Nanjing University of Science and Technology, Nanjing 210094, China.

出版信息

Proc Natl Acad Sci U S A. 2022 Jul 5;119(27):e2115939119. doi: 10.1073/pnas.2115939119. Epub 2022 Jun 28.

Abstract

Positive magnetoresistance (PMR) and negative magnetoresistance (NMR) describe two opposite responses of resistance induced by a magnetic field. Materials with giant PMR are usually distinct from those with giant NMR due to different physical natures. Here, we report the unusual photomagnetoresistance in the van der Waals heterojunctions of WSe/quasi-two-dimensional electron gas, showing the coexistence of giant PMR and giant NMR. The PMR and NMR reach 1,007.5% at 9 T and 93.5% at 2.2 T in a single device, respectively. The magnetoresistance spans over two orders of magnitude on inversion of field direction, implying a giant unidirectional magnetoresistance (UMR). By adjusting the thickness of the WSe layer, we achieve the maxima of PMR and NMR, which are 4,900,000% and 99.8%, respectively. The unique magnetooptical transport shows the unity of giant UMR, PMR, and NMR, referred to as giant bipolar unidirectional photomagnetoresistance. These features originate from strong out-of-plane spin splitting, magnetic field-enhanced recombination of photocarriers, and the Zeeman effect through our experimental and theoretical investigations. This work offers directions for high-performance light-tunable spintronic devices.NMR).

摘要

正磁电阻(PMR)和负磁电阻(NMR)描述了磁场引起的电阻的两种相反响应。由于物理性质不同,具有巨正磁电阻的材料通常与具有巨负磁电阻的材料不同。在此,我们报道了WSe/准二维电子气范德华异质结中不寻常的光磁电阻,展示了巨正磁电阻和巨负磁电阻的共存。在单个器件中,正磁电阻和负磁电阻在9特斯拉时分别达到1007.5%和在2.2特斯拉时达到93.5%。当磁场方向反转时,磁电阻跨越两个数量级,这意味着存在巨大的单向磁电阻(UMR)。通过调整WSe层的厚度,我们实现了正磁电阻和负磁电阻的最大值,分别为4900000%和99.8%。独特的磁光输运展示了巨大单向磁电阻、正磁电阻和负磁电阻的统一,即巨大双极单向光磁电阻。通过我们的实验和理论研究,这些特性源于强烈的面外自旋分裂、光载流子的磁场增强复合以及塞曼效应。这项工作为高性能光可调自旋电子器件提供了方向。负磁电阻(NMR)

https://cdn.ncbi.nlm.nih.gov/pmc/blobs/f4fe/9271161/f430b369252c/pnas.2115939119fig01.jpg

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