Somphonsane Ratchanok, Chiawchan Tinna, Bootsa-Ard Waraporn, Ramamoorthy Harihara
Department of Physics, School of Science, King Mongkut's Institute of Technology Ladkrabang, Bangkok 10520, Thailand.
Thailand Center of Excellence in Physics, Commission on Higher Education, 328 Si Ayutthaya Road, Bangkok 10400, Thailand.
Materials (Basel). 2023 Jul 4;16(13):4817. doi: 10.3390/ma16134817.
In this study, the influence of growth temperature variation on the synthesis of MoS using a direct MoO precursor was investigated. The research showed that the growth temperature had a strong impact on the resulting morphologies. Below 650 °C, no nucleation or growth of MoS occurred. The optimal growth temperature for producing continuous MoS films without intermediate-state formation was approximately 760 °C. However, when the growth temperatures exceeded 800 °C, a transition from pure MoS to predominantly intermediate states was observed. This was attributed to enhanced diffusion of the precursor at higher temperatures, which reduced the local S:Mo ratio. The diffusion equation was analyzed, showing how the diffusion coefficient, diffusion length, and concentration gradients varied with temperature, consistent with the experimental observations. This study also investigated the impact of increasing the MoO precursor amount, resulting in the formation of multilayer MoS domains at the outermost growth zones. These findings provide valuable insights into the growth criteria for the effective synthesis of clean and large-area MoS, thereby facilitating its application in semiconductors and related industries.
在本研究中，研究了使用直接的MoO前驱体时生长温度变化对MoS合成的影响。研究表明，生长温度对所得形态有强烈影响。在650℃以下，未发生MoS的成核或生长。制备无中间态形成的连续MoS薄膜的最佳生长温度约为760℃。然而，当生长温度超过800℃时，观察到从纯MoS到主要为中间态的转变。这归因于前驱体在较高温度下扩散增强，这降低了局部S:Mo比。对扩散方程进行了分析，显示了扩散系数、扩散长度和浓度梯度如何随温度变化，与实验观察结果一致。本研究还研究了增加MoO前驱体用量的影响，导致在最外层生长区形成多层MoS域。这些发现为有效合成清洁大面积MoS的生长标准提供了有价值的见解，从而促进其在半导体及相关行业的应用。
