Syari'ati Ali, Kumar Sumit, Zahid Amara, Ali El Yumin Abdurrahman, Ye Jianting, Rudolf Petra
Zernike Institute for Advanced Materials, University of Groningen, Nijenborgh 4, 9747 AG Groningen, The Netherlands.
Chem Commun (Camb). 2019 Aug 27;55(70):10384-10387. doi: 10.1039/c9cc01577a.
The fingerprint of structural defects in CVD grown MoS2 was revealed by means of X-ray Photoelectron Spectroscopy (XPS). These defects can be partially healed by grafting thiol-functionalized molecules. The functionalization does not alter the semiconducting properties of MoS2 as confirmed by the photoluminescence spectra.
通过X射线光电子能谱（XPS）揭示了化学气相沉积（CVD）生长的二硫化钼（MoS2）中结构缺陷的特征。通过接枝硫醇官能化分子，这些缺陷可以部分修复。光致发光光谱证实，官能化不会改变MoS2的半导体特性。
