Suppr超能文献

α-MoO/MoS范德华异质结构中正三重态的观测。

Observation of positive trions in α-MoO/MoS van der Waals heterostructures.

作者信息

Kumar Ravindra, Mishra Vikash, Dixit Tejendra, Barman Prahalad Kanti, Nayak Pramoda K, Rao M S Ramachandra

机构信息

Department of Physics, Quantum Centre of Excellence for Diamond and Emergent Materials (QuCenDiEM), Nano Functional Materials Technology Centre and Materials Science Research Centre, Indian Institute of Technology Madras, Chennai, 600036, India.

Department of Physics, 2D Materials Research and Innovation Group, and Micro-Nano and Bio-Fluidics Group, Indian Institute of Technology Madras, Chennai, 600036, India.

出版信息

Nanoscale. 2023 Jul 27;15(29):12358-12365. doi: 10.1039/d3nr01480k.

Abstract

Mono-layer transition metal dichalcogenides (TMDCs) have emerged as an ideal platform for the study of many-body physics. As a result of their low dimensionality, these materials show a strong Coulomb interaction primarily due to reduced dielectric screening that leads to the formation of stable excitons (bound electron-hole pairs) and higher order excitons, including trions, and bi-excitons even at room temperature. van der Waals (vdW) heterostructures (HSs) of TMDCs provide an additional degree of freedom for altering the properties of 2D materials because charge carriers (electrons) in the different atomically thin layers are exposed to interlayer coupling and charge transfer takes place between the layers of vdW HSs. Astoundingly, it leads to the formation of different types of quasi-particles. In the present work, we report the synthesis of vdW HSs, , α-MoO/MoS, on a 300 nm SiO/Si substrate and investigate their temperature-dependent photoluminescence (PL) spectra. Interestingly, an additional PL peak is observed in the case of the HS, along with A and B excitonic peaks. The emergence of a new PL peak in the low-energy regime has been assigned to the formation of a positive trion. The formation of positive trions in the HS is due to the high work function of α-MoO, which enables the spontaneous transit of electrons from MoS to α-MoO and injection of holes into the MoS layer. In order to confirm charge transfer in the α-MoO/MoS HS, systematic power and wavelength-dependent Raman and PL studies, as well as first-principle calculations using Bader charge analysis, have been carried out, which clearly validate our mechanism. We believe that this study will provide a platform towards the integration of vdW HSs for next-generation excitonic devices.

摘要

单层过渡金属二硫属化物(TMDCs)已成为研究多体物理的理想平台。由于其低维特性,这些材料表现出很强的库仑相互作用,这主要归因于介电屏蔽的减弱,即使在室温下也会导致稳定激子(束缚的电子 - 空穴对)以及包括三重子和双激子在内的高阶激子的形成。TMDCs的范德华(vdW)异质结构(HSs)为改变二维材料的性质提供了额外的自由度,因为不同原子薄层中的电荷载流子(电子)会受到层间耦合作用,并且在vdW HSs的层间会发生电荷转移。令人惊讶的是,这会导致不同类型准粒子的形成。在本工作中,我们报道了在300 nm SiO₂/Si衬底上合成vdW HSs α-MoO₃/MoS₂,并研究了它们的温度依赖光致发光(PL)光谱。有趣的是,在该HS的情况下,除了A和B激子峰外,还观察到一个额外的PL峰。低能区新PL峰的出现被归因于正三重子的形成。HS中形成正三重子是由于α-MoO₃的高功函数,这使得电子能够自发地从MoS₂转移到α-MoO₃,并将空穴注入到MoS₂层中。为了证实α-MoO₃/MoS₂ HS中的电荷转移,我们进行了系统的功率和波长依赖的拉曼和PL研究,以及使用巴德电荷分析的第一性原理计算,这些结果清楚地验证了我们提出的机制。我们相信这项研究将为下一代激子器件的vdW HSs集成提供一个平台。

文献检索

告别复杂PubMed语法,用中文像聊天一样搜索,搜遍4000万医学文献。AI智能推荐,让科研检索更轻松。

立即免费搜索

文件翻译

保留排版,准确专业,支持PDF/Word/PPT等文件格式,支持 12+语言互译。

免费翻译文档

深度研究

AI帮你快速写综述,25分钟生成高质量综述,智能提取关键信息,辅助科研写作。

立即免费体验