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Dynamic Performance Evaluation of Bidirectional Bridgeless Interleaved Totem-Pole Power Factor Correction Boost Converter.

作者信息

Cheng Hsien-Chie, Jhu Wen-You, Liu Yu-Cheng, Zheng Da-Wei, Liu Yan-Cheng, Chang Tao-Chih

机构信息

Department of Aerospace and Systems Engineering, Feng Chia University, Taichung 407, Taiwan.

Ph.D Program of Mechanical and Aeronautical Engineering, Feng Chia University, Taichung 407, Taiwan.

出版信息

Micromachines (Basel). 2025 Feb 16;16(2):223. doi: 10.3390/mi16020223.

DOI:10.3390/mi16020223
PMID:40047698
原文链接:https://pmc.ncbi.nlm.nih.gov/articles/PMC11857391/
Abstract

This study aims to conduct an assessment of the dynamic characteristics of a proposed 6.6 kW bidirectional bridgeless three-leg interleaved totem-pole power factor correction (PFC) boost converter developed for the front-end stage of electric vehicle onboard charger applications during load cycles. This proposed PFC boost converter integrates the self-developed silicon carbide (SiC) power MOSFET modules for achieving high efficiency and high power density. To assess the switching transient behavior, power loss, and efficiency of the SiC MOSFET power modules, a fully integrated electromagnetic-circuit coupled simulation (ECCS) model that incorporates an electromagnetic model, an equivalent circuit model, and an SiC MOSFET characterization model are used. In this simulation model, the impact of parasitic effects on the system's performance is considered. The accuracy of the ECCS model is confirmed through comparing the calculated results with the experimental data obtained through the double pulse test and the closed-loop converter operation. Furthermore, a comparative study between the interleaved and non-interleaved topologies is also performed in terms of power loss and efficiency. Additionally, the performance of the SiC MOSFET-based PFC boost converter is further compared with that of the silicon (Si) insulated gate bipolar transistor (IGBT)-based one. Finally, a parametric analysis is carried out to explore the impact of several operating conditions on the power loss of the proposed totem-pole PFC boost converter.

摘要
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/e367/11857391/b0f54d3b74d6/micromachines-16-00223-g010.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/e367/11857391/bd86b62aacd4/micromachines-16-00223-g001.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/e367/11857391/fb17d8ff8de8/micromachines-16-00223-g002.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/e367/11857391/a4ee0c903cf6/micromachines-16-00223-g003.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/e367/11857391/5a889c63e5b8/micromachines-16-00223-g004.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/e367/11857391/c004fd18b273/micromachines-16-00223-g005a.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/e367/11857391/c0fd814aa369/micromachines-16-00223-g006.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/e367/11857391/04ea68bd881d/micromachines-16-00223-g007.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/e367/11857391/9ed29b7a98cc/micromachines-16-00223-g008.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/e367/11857391/068499f2ea16/micromachines-16-00223-g009.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/e367/11857391/b0f54d3b74d6/micromachines-16-00223-g010.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/e367/11857391/bd86b62aacd4/micromachines-16-00223-g001.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/e367/11857391/fb17d8ff8de8/micromachines-16-00223-g002.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/e367/11857391/a4ee0c903cf6/micromachines-16-00223-g003.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/e367/11857391/5a889c63e5b8/micromachines-16-00223-g004.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/e367/11857391/c004fd18b273/micromachines-16-00223-g005a.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/e367/11857391/c0fd814aa369/micromachines-16-00223-g006.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/e367/11857391/04ea68bd881d/micromachines-16-00223-g007.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/e367/11857391/9ed29b7a98cc/micromachines-16-00223-g008.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/e367/11857391/068499f2ea16/micromachines-16-00223-g009.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/e367/11857391/b0f54d3b74d6/micromachines-16-00223-g010.jpg

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Materials (Basel). 2024 Jul 23;17(15):3636. doi: 10.3390/ma17153636.
3
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Micromachines (Basel). 2023 Jun 30;14(7):1356. doi: 10.3390/mi14071356.
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4H-SiC Double Trench MOSFET with Split Heterojunction Gate for Improving Switching Characteristics.具有分裂异质结栅极的4H-SiC双沟槽MOSFET以改善开关特性。
Materials (Basel). 2021 Jun 25;14(13):3554. doi: 10.3390/ma14133554.
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Silicon Carbide Converters and MEMS Devices for High-temperature Power Electronics: A Critical Review.用于高温电力电子学的碳化硅转换器和微机电系统器件：综述
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