一种具有非对称输出合成器的Ku波段硅基氮化镓毫米波单片集成电路功率放大器。

A Ku-Band GaN-on-Si MMIC Power Amplifier with an Asymmetrical Output Combiner.

作者信息

Pino Javier Del, Khemchandani Sunil Lalchand, Mayor-Duarte Daniel, San-Miguel-Montesdeoca Mario, Mateos-Angulo Sergio, de Arriba Francisco, García María

机构信息

Institute for Applied Microelectronics (IUMA), Universidad de Las Palmas de Gran Canaria, 35017 Las Palmas de Gran Canaria, Spain.

Wireless Innovative MMIC (WIMMIC), 35017 Las Palmas de Gran Canaria, Spain.

出版信息

Sensors (Basel). 2023 Jul 13;23(14):6377. doi: 10.3390/s23146377.

DOI:10.3390/s23146377

PMID:37514670

原文链接:https://pmc.ncbi.nlm.nih.gov/articles/PMC10385402/

Abstract

In this paper, a microwave monolithic integrated circuit (MMIC) high-power amplifier (HPA) for Ku-band active radar applications based on gallium nitride on silicon (GaN-on-Si) is presented. The design is based on a three-stage architecture and was implemented using the D01GH technology provided by OMMIC foundry. Details on the architecture definition and design process to maximize delivered power are provided along with stability and thermal analyses. To optimize the amplifier performance, an asymmetry was included at the output combiner. Experimental results show that the HPA achieves a 39.5 dBm pulsed-mode output power, a peak linear gain of 23 dB, a drain efficiency of 27%, and good input/output matching in the 16-19 GHz frequency range. The chip area is 5 × 3.5 mm2 and for the measurements was mounted on a custom-made module. These results demonstrate that GaN-on-Si-based Solid-State Power Amplifiers (SSPAs) can be used for the implementation of Ku-band active radars.

摘要

本文介绍了一种基于硅基氮化镓（GaN-on-Si）的用于Ku波段有源雷达应用的微波单片集成电路（MMIC）高功率放大器（HPA）。该设计基于三级架构，并使用了OMMIC代工提供的D01GH技术实现。文中提供了架构定义和设计过程的详细信息，以最大化输出功率，并进行了稳定性和热分析。为了优化放大器性能，在输出合成器处引入了不对称性。实验结果表明，该HPA在16-19GHz频率范围内实现了39.5dBm的脉冲模式输出功率、23dB的峰值线性增益、27%的漏极效率以及良好的输入/输出匹配。芯片面积为5×3.5mm2，测量时安装在定制模块上。这些结果表明，基于GaN-on-Si的固态功率放大器（SSPA）可用于Ku波段有源雷达的实现。