Sun Benxiao, Huang Huixue, Wen Pan, Xu Meng, Peng Cong, Chen Longlong, Li Xifeng, Zhang Jianhua
School of Microelectronics, Shanghai University, Shanghai 201800, China.
Key Laboratory of Advanced Display and System Applications, Ministry of Education, Shanghai University, Shanghai 200072, China.
Sensors (Basel). 2023 Jul 23;23(14):6623. doi: 10.3390/s23146623.
Thin film transistors (TFTs) as the core devices for displays, are widely used in various fields including ultra-high-resolution displays, flexible displays, wearable electronic skins and memory devices, especially in terms of sensors. TFTs have now started to move towards miniaturization. Similarly to MOSFETs problem, traditional planar structure TFTs have difficulty in reducing the channel's length sub-1μm under the existing photolithography technology. Vertical channel thin film transistors (V-TFTs) are proposed. It is an effective solution to overcome the miniaturization limit of traditional planar TFTs. So, we summarize the different aspects of VTFTs. Firstly, this paper introduces the structure types, key parameters, and the impact of different preparation methods in devices of V-TFTs. Secondly, an overview of the research progress of V-TFTs' active layer materials in recent years, the characteristics of V-TFTs and their application in examples has proved the enormous application potential of V-TFT in sensing. Finally, in addition to the advantages of V-TFTs, the current technical challenge and their potential solutions are put forward, and the future development trend of this new structure of V-TFTs is proposed.
薄膜晶体管（TFT）作为显示器的核心器件，广泛应用于包括超高分辨率显示器、柔性显示器、可穿戴电子皮肤和存储器件等各个领域，尤其是在传感器方面。TFT目前已开始朝着小型化发展。与MOSFET问题类似，传统平面结构的TFT在现有光刻技术下难以将沟道长度减小到1μm以下。垂直沟道薄膜晶体管（V-TFT）应运而生。它是克服传统平面TFT小型化限制的有效解决方案。因此，我们总结了V-TFT的不同方面。首先，本文介绍了V-TFT器件的结构类型、关键参数以及不同制备方法的影响。其次，概述了近年来V-TFT有源层材料的研究进展，V-TFT的特性及其在实例中的应用证明了V-TFT在传感方面具有巨大的应用潜力。最后，除了V-TFT的优点外，还提出了当前的技术挑战及其潜在解决方案，并展望了这种新型结构V-TFT的未来发展趋势。
