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用于高性能电阻式存储器件的溶液法制备的氢键有机框架纳米薄膜

Solution-Processed Hydrogen-Bonded Organic Framework Nanofilms for High-Performance Resistive Memory Devices.

作者信息

Yang Xue, Huang Jian, Gao Shuiying, Zhao Yanqi, Huang Tao, Li Hongfang, Liu Tianfu, Yu Zhiyang, Cao Rong

机构信息

State Key Laboratory of Structural Chemistry, Fujian Institute of Research on the Structure of Matter, Chinese Academy of Sciences, Fuzhou, 350002, P. R. China.

Fujian Science and Technology Innovation Laboratory for Optoelectronic Information of China, Fuzhou, 350108, P. R. China.

出版信息

Adv Mater. 2023 Nov;35(47):e2305344. doi: 10.1002/adma.202305344. Epub 2023 Oct 17.

Abstract

The integration of hydrogen-bonded organic frameworks (HOFs) into electronic devices holds great promise due to their high crystallinity, intrinsic porosity, and easy regeneration. However, despite their potential, the utilization of HOFs in electronic devices remains largely unexplored, primarily due to the challenges associated with fabricating high-quality films. Herein, a controlled synthesis of HOF nanofilms with smooth surface, good crystallinity, and high orientation is achieved using a solution-processed approach. The memristors exhibit outstanding bipolar switching performance with a low set voltage of 0.86 V, excellent retention of 1.64 × 10 s, and operational endurance of 60 cycles. Additionally, these robust memristors display remarkable thermal stability, maintaining their performance even at elevated temperatures of up to 200 °C. More strikingly, scratched HOF films can be readily regenerated through a simple solvent rinsing process, enabling their reuse for the fabrication of new memristors, which is difficult to achieve with traditional resistive switching materials. Additionally, a switching mechanism based on the reversible formation and annihilation of conductive filaments is revealed. This work provides novel and invaluable insights that have a significant impact on advancing the widespread adoption of HOFs as active layers in electronic devices.

摘要

由于氢键有机框架(HOFs)具有高结晶度、固有孔隙率和易于再生的特点,将其集成到电子器件中具有很大的前景。然而,尽管它们具有潜力,但HOFs在电子器件中的应用在很大程度上仍未得到探索,主要是因为与制备高质量薄膜相关的挑战。在此,使用溶液处理方法实现了具有光滑表面、良好结晶度和高取向性的HOF纳米薄膜的可控合成。忆阻器表现出出色的双极开关性能,设置电压低至0.86 V,优异的保持时间为1.64×10 s,操作耐久性为60个循环。此外,这些坚固的忆阻器显示出显著的热稳定性,即使在高达200°C的高温下也能保持其性能。更引人注目的是,刮擦后的HOF薄膜可以通过简单的溶剂冲洗过程轻松再生,使其能够重新用于制造新的忆阻器,这是传统电阻开关材料难以实现的。此外,还揭示了一种基于导电细丝可逆形成和湮灭的开关机制。这项工作提供了新颖且宝贵的见解,对推动HOFs作为电子器件有源层的广泛应用具有重大影响。

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