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单、双及ETL夹层层状聚(N-乙烯基吡咯烷酮)对倒置量子点发光二极管电荷注入平衡及性能的影响

Single, Double and ETL-Sandwiched PVPy Interlayer Effect on Charge Injection Balance and Performance of Inverted Quantum Dot Light-Emitting Diodes.

作者信息

Kiguye Collins, Jeong Woo Jin, Jeong Gwang Hyun, Park Jin Ho, Kwak Hee Jung, Kim Gun Woong, Jang Seok Hwan, Kim Jun Young

机构信息

Department of Semiconductor Engineering, Gyeongsang National University, 501 Jinjudaero, Jinju 52828, Gyeongnam, Republic of Korea.

出版信息

Polymers (Basel). 2023 Aug 4;15(15):3308. doi: 10.3390/polym15153308.

DOI:10.3390/polym15153308
PMID:37571201
原文链接:https://pmc.ncbi.nlm.nih.gov/articles/PMC10422574/
Abstract

A desire to achieve optimal electron transport from the electron transport layer (ETL) towards the emissive layer (EML) is an important research factor for the realization of high performance quantum dot light-emitting diodes (QD-LEDs). In this paper, we study the effect of a single, double, and electron transport layer sandwiched Poly(4-vinylpyridine) (PVPy here on) on the charge injection balance and on the overall device performance of InP-based red quantum dot light emitting diodes (red QD-LEDs). The results showed general improvement of device characteristic performance metrics such as operational life with incorporation of a PVPy interlayer. The best performance was observed at a lower concentration of PVPy (@ 0.1 mg/mL) in interlayer with continual worsening in performance as PVPy concentration in the interlayer increased in other fabricated devices. The AFM images obtained for the different materials reported improved surface morphology and overall improved surface properties, but decreased overall device performance as PVPy concentration in interlayer was increased. Furthermore, we fabricated two special devices: in the first special device, a single 0.1 mg/mL PVPy sandwiched between two ZnO ETL layers, and in the second special device, two 0.1 mg/mL PVPy interlayers were inter-sandwiched between two ZnO ETL layers. Particular emphasis was placed on monitoring the maximum obtained EQE and the maximum obtained luminance of all the devices. The first special device showed better all-round improved performance than the second special device compared to the reference device (without PVPy) and the device with a single 0.1 mg/mL PVPy interlayer stacked between ZnO ETL and the emissive layer.

摘要

实现从电子传输层(ETL)到发光层(EML)的最佳电子传输是实现高性能量子点发光二极管(QD-LED)的一个重要研究因素。在本文中,我们研究了单、双以及夹在中间的聚(4-乙烯基吡啶)(以下简称PVPy)电子传输层对基于InP的红色量子点发光二极管(红色QD-LED)的电荷注入平衡和整体器件性能的影响。结果表明,加入PVPy中间层后,器件的特征性能指标如工作寿命等普遍得到改善。在中间层中PVPy浓度较低(@0.1mg/mL)时观察到最佳性能,而在其他制备的器件中,随着中间层中PVPy浓度的增加,性能持续恶化。对不同材料获得的原子力显微镜(AFM)图像显示表面形貌得到改善,整体表面性能也有所提高,但随着中间层中PVPy浓度的增加,器件的整体性能下降。此外,我们制备了两种特殊器件:在第一个特殊器件中,在两个ZnO ETL层之间夹有一层0.1mg/mL的PVPy;在第二个特殊器件中,在两个ZnO ETL层之间夹有两层0.1mg/mL的PVPy中间层。特别强调监测所有器件获得的最大外量子效率(EQE)和最大亮度。与参考器件(无PVPy)以及在ZnO ETL和发光层之间堆叠有一层0.1mg/mL PVPy中间层的器件相比,第一个特殊器件的整体性能比第二个特殊器件更好。

https://cdn.ncbi.nlm.nih.gov/pmc/blobs/dcae/10422574/5aa328c91d7d/polymers-15-03308-g009.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/dcae/10422574/77f012fa3bec/polymers-15-03308-g001.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/dcae/10422574/f0cba52892ed/polymers-15-03308-g002.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/dcae/10422574/3f4f7c5d5508/polymers-15-03308-g004.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/dcae/10422574/7caa26e1ced9/polymers-15-03308-g005.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/dcae/10422574/f8842b9479f5/polymers-15-03308-g007.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/dcae/10422574/669a539fbef7/polymers-15-03308-g008.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/dcae/10422574/5aa328c91d7d/polymers-15-03308-g009.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/dcae/10422574/77f012fa3bec/polymers-15-03308-g001.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/dcae/10422574/f0cba52892ed/polymers-15-03308-g002.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/dcae/10422574/3f4f7c5d5508/polymers-15-03308-g004.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/dcae/10422574/7caa26e1ced9/polymers-15-03308-g005.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/dcae/10422574/f8842b9479f5/polymers-15-03308-g007.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/dcae/10422574/669a539fbef7/polymers-15-03308-g008.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/dcae/10422574/5aa328c91d7d/polymers-15-03308-g009.jpg

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本文引用的文献

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Improvement in hole transporting ability and device performance of quantum dot light emitting diodes.量子点发光二极管的空穴传输能力及器件性能的改善
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