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探索超快硅探测器中的中间间隙区域：对隔离结构以及电场对电荷倍增影响的见解。

Exploring the Interpad Gap Region in Ultra-Fast Silicon Detectors: Insights into Isolation Structure and Electric Field Effects on Charge Multiplication.

作者信息

Laštovička-Medin Gordana, Rebarz Mateusz, Doknic Jovana, Bozovic Ivona, Kramberger Gregor, Laštovička Tomáš, Andreasson Jakob

机构信息

Faculty of Natural Sciences and Mathematics, University of Montenegro, Dzordza Vashingtona, 81000 Podgorica, Montenegro.

ELI Beamlines Facility, The Extreme Light Infrastructure ERIC, Za Radnicí 835, 25241 Dolní Břežany, Czech Republic.

出版信息

Sensors (Basel). 2023 Jul 28;23(15):6746. doi: 10.3390/s23156746.

DOI:10.3390/s23156746
PMID:37571529
原文链接:https://pmc.ncbi.nlm.nih.gov/articles/PMC10422380/
Abstract

We present an in-depth investigation of the interpad (IP) gap region in the ultra-fast silicon detector (UFSD) Type 10, utilizing a femtosecond laser beam and the transient current technique (TCT) as probing instruments. The sensor, fabricated in the trench-isolated TI-LGAD RD50 production batch at the FBK Foundry, enables a direct comparison between TI-LGAD and standard UFSD structures. This research aims to elucidate the isolation structure in the IP region and measure the IP distance between pads, comparing it to the nominal value provided by the vendor. Our findings reveal an unexpectedly strong signal induced near p-stops. This effect is amplified with increasing laser power, suggesting significant avalanche multiplication, and is also observed at moderate laser intensity and high HV bias. This investigation contributes valuable insights into the IP region's isolation structure and electric field effects on charge collection, providing critical data for the development of advanced sensor technology for the Compact Muon Selenoid (CMS) experiment and other high-precision applications.

摘要

我们利用飞秒激光束和瞬态电流技术（TCT）作为探测工具，对10型超快硅探测器（UFSD）中的衬底间隙（IP）区域进行了深入研究。该传感器是在FBK铸造厂的沟槽隔离TI-LGAD RD50生产批次中制造的，能够直接比较TI-LGAD和标准UFSD结构。本研究旨在阐明IP区域的隔离结构，并测量焊盘之间的IP距离，并将其与供应商提供的标称值进行比较。我们的研究结果揭示了在p型终止区附近意外产生的强信号。随着激光功率的增加，这种效应会放大，表明存在显著的雪崩倍增现象，并且在中等激光强度和高高压偏置下也能观察到。这项研究为IP区域的隔离结构以及电场对电荷收集的影响提供了有价值的见解，为紧凑型μ子螺线管（CMS）实验和其他高精度应用的先进传感器技术开发提供了关键数据。

https://cdn.ncbi.nlm.nih.gov/pmc/blobs/f5b8/10422380/4b29fbece2a6/sensors-23-06746-g008.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/f5b8/10422380/e35824d2e6b0/sensors-23-06746-g001.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/f5b8/10422380/39301ab12f0c/sensors-23-06746-g002.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/f5b8/10422380/5251cce2a882/sensors-23-06746-g003.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/f5b8/10422380/f82a19f84f4d/sensors-23-06746-g004.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/f5b8/10422380/1edd721ed2b5/sensors-23-06746-g005.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/f5b8/10422380/59310dcdd8b9/sensors-23-06746-g006.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/f5b8/10422380/ddb9d4873a27/sensors-23-06746-g007.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/f5b8/10422380/4b29fbece2a6/sensors-23-06746-g008.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/f5b8/10422380/e35824d2e6b0/sensors-23-06746-g001.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/f5b8/10422380/39301ab12f0c/sensors-23-06746-g002.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/f5b8/10422380/5251cce2a882/sensors-23-06746-g003.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/f5b8/10422380/f82a19f84f4d/sensors-23-06746-g004.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/f5b8/10422380/1edd721ed2b5/sensors-23-06746-g005.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/f5b8/10422380/59310dcdd8b9/sensors-23-06746-g006.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/f5b8/10422380/ddb9d4873a27/sensors-23-06746-g007.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/f5b8/10422380/4b29fbece2a6/sensors-23-06746-g008.jpg

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