Takashima Hiroshi, Inaguma Yoshiyuki, Nagao Masayoshi, Murakami Katsuhisa
National Institute of Advanced Industrial Science and Technology, 1-1-1 Umezono, Tsukuba, Ibaraki 305-8568, Japan.
Department of Chemistry, Faculty of Science, Gakushuin University, 1-5-1 Mejiro, Toshima-ku, Tokyo 171-8588, Japan.
ACS Omega. 2023 Jul 25;8(31):28778-28782. doi: 10.1021/acsomega.3c03666. eCollection 2023 Aug 8.
We have succeeded in obtaining BaSnO perovskite thin films with remarkable near-infrared luminescence by van der Waals growth. The films were grown on quartz glass substrates by pulsed laser deposition using hexagonal boron nitride as the seed layer, and their crystallinity was confirmed by X-ray diffraction and cross-sectional transmission electron microscopy. The near-infrared emission of the grown film exhibited a broad emission peak centered at 920 nm. The transparency of the BaSnO film (thickness = 1000 nm)/ hexagonal boron nitride /double-sided optically polished quartz glass substrate was approximately 90% at approximately 500 nm with or without the BaSnO film. Films showing remarkable near-infrared emission and high transparency obtained by van der Waals-type growth could be used in practical wavelength conversion devices that improve the efficiency of Si single-crystal solar cells. The hexagonal boron nitride seed layer supporting the van der Waals growth is an effective method for high-quality crystal growth of films. It can be used for perovskite-type oxides with many functionalities.
我们通过范德华生长成功获得了具有显著近红外发光的BaSnO钙钛矿薄膜。这些薄膜是在石英玻璃衬底上通过脉冲激光沉积生长的，使用六方氮化硼作为籽晶层，其结晶度通过X射线衍射和横截面透射电子显微镜得到证实。生长薄膜的近红外发射呈现出以920nm为中心的宽发射峰。BaSnO薄膜（厚度 = 1000nm）/六方氮化硼/双面光学抛光石英玻璃衬底在约500nm处，无论有无BaSnO薄膜，透明度均约为90%。通过范德华型生长获得的具有显著近红外发射和高透明度的薄膜可用于提高硅单晶太阳能电池效率的实际波长转换器件。支持范德华生长的六方氮化硼籽晶层是薄膜高质量晶体生长的有效方法。它可用于具有多种功能的钙钛矿型氧化物。
