Panda Padmalochan, Chatterjee Soumyadip, Tallur Siddharth, Laha Apurba
Electrical Engineering Department, Indian Institute of Technology Bombay, Mumbai, 400076, India.
Sci Rep. 2023 Aug 16;13(1):13329. doi: 10.1038/s41598-023-39760-9.
This work reports on the fabrication and characterization of an Au/ZnO/Pt-based high-overtone bulk acoustic resonator (HBAR) on SiC substrates. We evaluate its microwave characteristics comparing with Si substrates for micro-electromechanical applications. Dielectric magnetron sputtering and an electron beam evaporator are employed to develop highly c-axis-oriented ZnO films and metal electrodes. The crystal structure and surface morphology of post-growth layers are characterized using X-ray diffraction, atomic force microscopy, and scanning electron microscopy techniques. HBAR on SiC substrate results in multiple longitudinal bulk acoustic wave resonances up to 7 GHz, with the strongest excited resonances emerging at 5.25 GHz. The value of f.Q (Resonance frequency.Quality factor) parameter obtained using a novel Q approach method for HBAR on SiC substrate is 4.1 [Formula: see text] 10[Formula: see text] Hz, which to the best of our knowledge, is the highest among all reported values for specified ZnO-based devices.
这项工作报道了在碳化硅衬底上制备和表征基于金/氧化锌/铂的高次泛音体声波谐振器（HBAR）。我们将其微波特性与用于微机电应用的硅衬底进行比较评估。采用介电磁控溅射和电子束蒸发器来制备高度c轴取向的氧化锌薄膜和金属电极。利用X射线衍射、原子力显微镜和扫描电子显微镜技术对生长后各层的晶体结构和表面形貌进行表征。碳化硅衬底上的HBAR产生了高达7吉赫兹的多个纵向体声波谐振，最强的激发谐振出现在5.25吉赫兹。使用一种新颖的Q值测量方法得到的碳化硅衬底上HBAR的f.Q（谐振频率·品质因数）参数值为4.1×10⁹赫兹，据我们所知，这是所有已报道的特定氧化锌基器件中该参数的最高值。
