Yu Hongyu, Pang Wei, Zhang Hao, Kim Eun Sok
Department of Electrical Engineering, University of Southern California, Los Angeles, CA, USA.
IEEE Trans Ultrason Ferroelectr Freq Control. 2007 Oct;54(10):2102-9. doi: 10.1109/tuffc.2007.505.
This paper describes temperature compensated bulk acoustic-wave resonators (BAR) with temperature coefficient of frequency (TCF) less than 1 ppm/degrees C at above 3 GHz. The temperature compensation is produced from the unique physical property of silicon dioxide's positive TCF, unlike most other materials that have negative TCF. Two types of resonators have been explored: film bulk acoustic resonator (FBAR) composed of Al/ZnO/Al/SiO2 on a surface micromachined cantilever that is released by XeF2 vapor etching and high-overtone acoustic resonator (HBAR) composed of an Al/ZnO/Al resonator on a bulk micromachined SiO2/Si/SiO2 supporting substrate.
本文描述了频率温度系数（TCF）在3GHz以上小于1ppm/℃的温度补偿体声波谐振器（BAR）。温度补偿源于二氧化硅正TCF的独特物理特性，这与大多数具有负TCF的其他材料不同。已探索了两种类型的谐振器：一种是薄膜体声波谐振器（FBAR），由表面微机械加工悬臂上的Al/ZnO/Al/SiO₂组成，该悬臂通过XeF₂气相蚀刻释放；另一种是高泛音声波谐振器（HBAR），由体微机械加工的SiO₂/Si/SiO₂支撑衬底上的Al/ZnO/Al谐振器组成。
