Liu Xiangming, Xia Shanhong, Peng Chunrong, Gao Yahao, Peng Simin, Zhang Zhouwei, Zhang Wei, Xing Xuebin, Liu Yufei
State Key Laboratory of Transducer Technology, Aerospace Information Research Institute, Chinese Academy of Sciences, Beijing 100190, China.
School of Electronic, Electrical and Communication Engineering, University of Chinese Academy of Sciences, Beijing 100049, China.
Micromachines (Basel). 2023 Jul 25;14(8):1489. doi: 10.3390/mi14081489.
This paper proposes a highly sensitive and high-resolution resonant MEMS electrostatic field sensor based on electrostatic stiffness perturbation, which uses resonant frequency as an output signal to eliminate the feedthrough interference from the driving voltage. The sensor is composed of a resonator, driving electrode, detection electrode, transition electrode, and electrostatic field sensing plate. The working principle is that when there is an electrostatic field, an induction charge will appear at the surface of the electrostatic field sensing plate and induce electrostatic stiffness on the resonator, which will cause a resonant frequency shift. The resonant frequency is used as the output signal of the microsensor. The characteristics of the electrostatic field sensor are analyzed with a theoretical model and verified by finite element simulation. A device prototype is fabricated based on the Silicon on Insulator (SOI) process and tested under vacuum conditions. The results indicate that the sensitivity of the sensor is 0.1384Hz/(kV/m) and the resolution is better than 10 V/m.
本文提出了一种基于静电刚度扰动的高灵敏度、高分辨率谐振微机电系统（MEMS）静电场传感器，该传感器利用谐振频率作为输出信号来消除驱动电压的馈通干扰。该传感器由谐振器、驱动电极、检测电极、过渡电极和静电场传感板组成。其工作原理是，当存在静电场时，静电场传感板表面会出现感应电荷，并在谐振器上感应出静电刚度，这将导致谐振频率发生偏移。谐振频率用作微传感器的输出信号。利用理论模型分析了静电场传感器的特性，并通过有限元模拟进行了验证。基于绝缘体上硅（SOI）工艺制作了器件原型，并在真空条件下进行了测试。结果表明，该传感器的灵敏度为0.1384Hz/(kV/m)，分辨率优于10V/m。
