Li Jiachen, Liu Jun, Peng Chunrong, Liu Xiangming, Wu Zhengwei, Zheng Fengjie
State Key Laboratory of Transducer Technology, Aerospace Information Research Institute, Chinese Academy of Sciences, Beijing 100190, China.
University of Chinese Academy of Sciences, Beijing 100049, China.
Micromachines (Basel). 2022 Apr 15;13(4):619. doi: 10.3390/mi13040619.
The paper presents a novel non-contact microelectromechanical systems (MEMS) voltage sensor based on the piezoresistive effect of single-crystal silicon. The novelty of the proposed sensor design lies in the implementation of unique single-crystal silicon piezoresistive beams for voltage measurement. The sensitive structure of the sensor produces electrostatic force deformation due to the measured voltage, resulting in the resistance change of single-crystal silicon piezoresistive beams which support a vibrating diaphragm. The voltage can be measured by sensing the resistance change. Moreover, the sensor does not need an additional driving signal and has lower power consumption. The prototype of the sensor was fabricated using an SOI micromachining process. The piezoresistive characteristics of the sensor and the corresponding output response relationship were analyzed through theoretical analysis and finite element simulation. The voltage response characteristics of the sensor were achieved at power frequencies from 50 Hz to 1000 Hz in the paper. The experimental results showed that they were in good agreement with simulations results with the theoretical model and obtained good response characteristics. The sensor has demonstrated that the minimum detectable voltages were 1 V for AC voltages at frequencies from 50 Hz to 300 Hz and 0.5 V for AC voltages at frequencies from 400 Hz to 1000 Hz, respectively. Moreover, the linearities of the sensor were 3.4% and 0.93% in the voltage measurement range of 900-1200 V at the power frequency of 50 Hz and in the voltage measurement range of 400-1200 V at the frequency of 200 Hz, respectively.
本文提出了一种基于单晶硅压阻效应的新型非接触式微机电系统（MEMS）电压传感器。所提出的传感器设计的新颖之处在于采用独特的单晶硅压阻梁进行电压测量。传感器的敏感结构由于被测电压而产生静电力变形，导致支撑振动膜片的单晶硅压阻梁的电阻发生变化。通过检测电阻变化可以测量电压。此外，该传感器不需要额外的驱动信号，功耗较低。该传感器的原型采用SOI微加工工艺制造。通过理论分析和有限元模拟分析了传感器的压阻特性和相应的输出响应关系。本文在50Hz至1000Hz的电源频率下实现了传感器的电压响应特性。实验结果表明，它们与理论模型的模拟结果吻合良好，获得了良好的响应特性。该传感器表明，对于50Hz至300Hz频率的交流电压，最小可检测电压为1V；对于400Hz至1000Hz频率的交流电压，最小可检测电压为0.5V。此外，在50Hz电源频率下900 - 1200V的电压测量范围内，传感器的线性度为3.4%；在200Hz频率下400 - 1200V的电压测量范围内，传感器的线性度为0.93%。
