Yang Yong, Wang Yongnian, Yan Huaxin, Cao Chenyi, Chen Naichao
State Grid Gansu Electric Power Company Institution of Electric Science and Technology, Lanzhou 730000, China.
School Energy and Mechanical Engineering, Shanghai University of Electric Power, Shanghai 200090, China.
Materials (Basel). 2023 Aug 26;16(17):5849. doi: 10.3390/ma16175849.
The high-concentration N doping of diamond film is still a challenge since nitrogen is limited during diamond growth. In this work, a novel method combined with the thermal decomposition of silicon nitride was proposed to form the activated N and Si components in the reactor gas that surrounded the substrate, with which the high-concentration N and Si doping of diamond film was performed. Meanwhile, graphene oxide (GO) particles were also employed as an adsorbent to further increase the concentration of the N element in diamond film by capturing the more decomposed N components. All the as-deposited diamond films were characterized by scanning electron microscopy, energy dispersive spectroscopy, Raman spectroscopy, and X-ray photoelectron spectroscopy. For the pure diamond film with a growth time of 0.5 h, the N and Si concentrations were 20.78 and 41.21 at%, respectively. For the GO-diamond film, they reached 47.47 and 21.66 at%, which set a new record for super high-concentration N doping of diamond film. Hence, thermal decomposition for the substrate can be regarded as a potential and alternative method to deposit the chemical vapor deposition (CVD) diamond film with high-concentration N, which be favorable for the widespread application of diamond in the electric field.
由于在金刚石生长过程中氮的含量有限，因此实现金刚石薄膜的高浓度氮掺杂仍然是一项挑战。在这项工作中，提出了一种结合氮化硅热分解的新方法，以在围绕衬底的反应气体中形成活性氮和硅成分，从而实现金刚石薄膜的高浓度氮和硅掺杂。同时，氧化石墨烯（GO）颗粒也被用作吸附剂，通过捕获更多分解的氮成分来进一步提高金刚石薄膜中氮元素的浓度。所有沉积的金刚石薄膜均通过扫描电子显微镜、能量色散光谱、拉曼光谱和X射线光电子能谱进行表征。对于生长时间为0.5小时的纯金刚石薄膜，氮和硅的浓度分别为20.78和41.21原子百分比。对于氧化石墨烯-金刚石薄膜，它们分别达到47.47和21.66原子百分比，这创造了金刚石薄膜超高浓度氮掺杂的新纪录。因此，衬底的热分解可被视为一种潜在的替代方法，用于沉积具有高浓度氮的化学气相沉积（CVD）金刚石薄膜，这有利于金刚石在电场中的广泛应用。
