Yeom Da-Young, Jeon Woojin, Tu Nguyen Dien Kha, Yeo So Young, Lee Sang-Soo, Sung Bong June, Chang Hyejung, Lim Jung Ah, Kim Heesuk
1] Photo-electronic Hybrids Research Center, Korea Institute of Science and Technology (KIST), Seoul 136-791, Korea [2] Department of Chemistry, Sogang University, Seoul 121-742, Korea.
Photo-electronic Hybrids Research Center, Korea Institute of Science and Technology (KIST), Seoul 136-791, Korea.
Sci Rep. 2015 May 5;5:9817. doi: 10.1038/srep09817.
For the utilization of graphene in various energy storage and conversion applications, it must be synthesized in bulk with reliable and controllable electrical properties. Although nitrogen-doped graphene shows a high doping efficiency, its electrical properties can be easily affected by oxygen and water impurities from the environment. We here report that boron-doped graphene nanoplatelets with desirable electrical properties can be prepared by the simultaneous reduction and boron-doping of graphene oxide (GO) at a high annealing temperature. B-doped graphene nanoplatelets prepared at 1000 °C show a maximum boron concentration of 6.04 ± 1.44 at %, which is the highest value among B-doped graphenes prepared using various methods. With well-mixed GO and g-B2O3 as the dopant, highly uniform doping is achieved for potentially gram-scale production. In addition, as a proof-of-concept, highly B-doped graphene nanoplatelets were used as an electrode of an electrochemical double-layer capacitor (EDLC) and showed an excellent specific capacitance value of 448 F/g in an aqueous electrolyte without additional conductive additives. We believe that B-doped graphene nanoplatelets can also be used in other applications such as electrocatalyst and nano-electronics because of their reliable and controllable electrical properties regardless of the outer environment.
为了将石墨烯应用于各种能量存储和转换领域，必须大量合成具有可靠且可控电学性质的石墨烯。尽管氮掺杂石墨烯具有较高的掺杂效率，但其电学性质很容易受到环境中氧和水杂质的影响。我们在此报告，通过在高温退火条件下同时还原和硼掺杂氧化石墨烯（GO），可以制备出具有理想电学性质的硼掺杂石墨烯纳米片。在1000 °C制备的硼掺杂石墨烯纳米片的最大硼浓度为6.04 ± 1.44 at%，这是使用各种方法制备的硼掺杂石墨烯中的最高值。以充分混合的GO和g-B2O3作为掺杂剂，可以实现高度均匀的掺杂，有望进行克级规模的生产。此外，作为概念验证，高度硼掺杂的石墨烯纳米片被用作电化学双层电容器（EDLC）的电极，在无额外导电添加剂的水性电解质中显示出448 F/g的优异比电容值。我们相信，由于硼掺杂石墨烯纳米片具有可靠且可控的电学性质，不受外部环境影响，因此它们也可用于其他应用，如电催化剂和纳米电子学。
