Franz Mathias, Safian Jouzdani Mahnaz, Kaßner Lysann, Daniel Marcus, Stahr Frank, Schulz Stefan E
Fraunhofer-Institute for Electronic Nano Systems ENAS, Technologie-Campus 3, 09126 Chemnitz, Germany.
Chemnitz University of Technology, Straße der Nationen 62, 09111 Chemnitz, Germany.
Beilstein J Nanotechnol. 2023 Sep 15;14:951-963. doi: 10.3762/bjnano.14.78. eCollection 2023.
In this work, we present the development of an atomic layer deposition (ALD) process for metallic cobalt. The process operates at low temperatures using dicobalt hexacarbonyl-1-heptyne [Co(CO)HC≡CCH] and hydrogen plasma. For this precursor an ALD window in the temperature range between 50 and 110 °C was determined with a constant deposition rate of approximately 0.1 Å/cycle. The upper limit of the ALD window is defined by the onset of the decomposition of the precursor. In our case, decomposition occurs at temperatures of 125 °C and above, resulting in a film growth in chemical vapour deposition mode. The lower limit of the ALD window is around 35 °C, where the reduction of the precursor is incomplete. The saturation behaviour of the process was investigated. X-ray photoelectron spectroscopy measurements could show that the deposited cobalt is in the metallic state. The finally established process in ALD mode shows a homogeneous coating at the wafer level.
在这项工作中，我们展示了一种用于金属钴的原子层沉积（ALD）工艺的开发。该工艺在低温下使用二羰基钴 - 1 - 庚炔[Co(CO)HC≡CCH]和氢等离子体运行。对于这种前驱体，确定了在50至110°C温度范围内的ALD窗口，沉积速率恒定约为0.1 Å/循环。ALD窗口的上限由前驱体分解的起始温度定义。在我们的案例中，分解发生在125°C及以上的温度，导致以化学气相沉积模式生长薄膜。ALD窗口的下限约为35°C，此时前驱体的还原不完全。研究了该工艺的饱和行为。X射线光电子能谱测量表明，沉积的钴处于金属态。最终确立的ALD模式工艺在晶圆级显示出均匀的涂层。
