基于模拟设计的具有台阶边缘终端结构的垂直菱形 p-n 结二极管

Vertical Diamond p-n Junction Diode with Step Edge Termination Structure Designed by Simulation.

作者信息

Cai Guangshuo, Mu Caoyuan, Li Jiaosheng, Li Liuan, Cheng Shaoheng, Wang Qiliang, Han Xiaobiao

机构信息

School of Optoelectronic Engineering, Guangdong Polytechnic Normal University, Guangzhou 510665, China.

State Key Laboratory of Superhard Materials, College of Physics, Jilin University, Changchun 130012, China.

出版信息

Micromachines (Basel). 2023 Aug 26;14(9):1667. doi: 10.3390/mi14091667.

DOI:10.3390/mi14091667

PMID:37763830

原文链接:https://pmc.ncbi.nlm.nih.gov/articles/PMC10535679/

Abstract

In this paper, diamond-based vertical p-n junction diodes with step edge termination are investigated using a Silvaco simulation (Version 5.0.10.R). Compared with the conventional p-n junction diode without termination, the step edge termination shows weak influences on the forward characteristics and helps to suppress the electric field crowding. However, the breakdown voltage of the diode with simple step edge termination is still lower than that of the ideal parallel-plane one. To further enhance the breakdown voltage, we combine a p-n junction-based junction termination extension on the step edge termination. After optimizing the structure parameters of the device, the depletion regions formed by the junction termination extension overlap with that of the p-n junction on the top mesa, resulting in a more uniform electric field distribution and higher device performance.

摘要

在本文中，使用Silvaco模拟软件（版本5.0.10.R）对具有台阶边缘终端的金刚石基垂直p-n结二极管进行了研究。与没有终端的传统p-n结二极管相比，台阶边缘终端对正向特性的影响较弱，并有助于抑制电场拥挤。然而，具有简单台阶边缘终端的二极管的击穿电压仍低于理想平行平面二极管的击穿电压。为了进一步提高击穿电压，我们在台阶边缘终端上结合了基于p-n结的结终端扩展。在优化器件的结构参数后，由结终端扩展形成的耗尽区与顶部台面的p-n结的耗尽区重叠，从而导致更均匀的电场分布和更高的器件性能。