Zhang Yan, Liu YuQiang, Zhou JianPing, Sun DaQian, Li HongMei
School of Mechanical Engineering, Xinjiang University, Wulumuqi, 830000, China.
Key Laboratory of Automobile Materials, School of Materials Science and Engineering, Jilin University, Changchun, 130022, China.
Adv Mater. 2023 Nov;35(47):e2307363. doi: 10.1002/adma.202307363. Epub 2023 Oct 15.
The preparation of highly conductive media and the construction of conducting channels play a crucial role in improving the electrical conductivity of electrically conductive adhesives. Therefore, a new MXene structure is reported in this paper, and the improved structure is rationally designed by computational modeling, which greatly prevents the buildup of MXene nanosheets, improves the stability of the structure, and creates a wide electron transfer channel, and the capacitance contribution of this structure is up to 86.3%. By mixing MXene modified with Ag-plated copper powder in a quantitative relationship to form high conductive media, the electrical conductivity is largely improved and the defect of low electron transfer rate of conventional conductive fillers is broken. The potential value of high conductive media is largely exploited using high throughput and machine learning methods, and here we show that the resistivity has reached 9.668 × 10 Ω m. The first principles investigate the conductive channels and electron transfer pathways of high-conductive media at the atomic level, further revealing the mechanism of action of high-conductive media. This study is also the first report on the application of MXene to high-conductive media.
高导电介质的制备和导电通道的构建在提高导电胶的电导率方面起着至关重要的作用。因此,本文报道了一种新型的MXene结构,并通过计算建模对其进行了合理设计,该结构极大地防止了MXene纳米片的堆积,提高了结构的稳定性,并创建了宽阔的电子转移通道,且该结构的电容贡献高达86.3%。通过将镀银铜粉改性的MXene按定量关系混合形成高导电介质,大幅提高了电导率,打破了传统导电填料电子转移速率低的缺陷。利用高通量和机器学习方法极大地挖掘了高导电介质的潜在价值,在此我们表明其电阻率已达到9.668×10Ω·m。第一性原理在原子水平上研究了高导电介质的导电通道和电子转移途径,进一步揭示了高导电介质的作用机制。本研究也是关于MXene在高导电介质中应用的首次报道。