Sun Shougang, Zhu Jie, Wang Zhongwu, Huang Yinan, Hu Yongxu, Chen Xiaosong, Sun Yajing, Li Liqiang, Hu Wenping
Key Laboratory of Organic Integrated Circuits, Ministry of Education, Tianjin Key Laboratory of Molecular Optoelectronic Sciences, Department of Chemistry, Institute of Molecular Aggregation Science, Tianjin University, Tianjin, 300072, China.
Joint School of National University of Singapore and Tianjin University, International Campus of Tianjin University, Fuzhou, 350207, China.
Adv Mater. 2023 Dec;35(52):e2306975. doi: 10.1002/adma.202306975. Epub 2023 Nov 20.
Integrating the merits of low cost, flexibility, and large-area processing, organic semiconductors (OSCs) are promising candidates for the next-generation electronic materials. The mobility and stability are the key figures of merit for its practical application. However, it is greatly challenging to improve the mobility and stability simultaneously owing to the weak interactions and poor electronic coupling between OSCs molecules. Here, an oxygen-induced lattice strain (OILS) strategy is developed to achieve OSCs with both high mobility and high stability. Utilizing the strategy, the maximum mobility of dinaphtho[2,3-b:2',3'-f]thieno[3,2-b]thiophene (DNTT) organic field-effect transistor (OFET) rises to 15.3 cm V s and the contact resistance lowers to 25.5 Ω cm. Remarkably, the thermal stability of DNTT is much improved, and a record saturated power density of ≈3.4 × 10 W cm is obtained. Both the experiments and theoretical calculations demonstrate that the lattice compressive strain induced by oxygen is responsible for their high performance and stability. Furthermore, the universality of the strategy is manifested in both n-type and p-type small OSCs. This work provides a novel strategy to improve both the mobility and the stability of OSCs, paving the way for the practical applications of organic devices.
有机半导体（OSCs）兼具低成本、灵活性和大面积加工的优点，是下一代电子材料的理想候选者。迁移率和稳定性是其实际应用的关键性能指标。然而，由于有机半导体分子间相互作用较弱且电子耦合较差，要同时提高迁移率和稳定性极具挑战性。在此，我们开发了一种氧诱导晶格应变（OILS）策略，以实现兼具高迁移率和高稳定性的有机半导体。利用该策略，二萘并[2,3 - b:2',3'- f]噻吩并[3,2 - b]噻吩（DNTT）有机场效应晶体管（OFET）的最大迁移率提高到15.3 cm² V⁻¹ s⁻¹，接触电阻降低到25.5 Ω cm。值得注意的是，DNTT的热稳定性得到显著改善，获得了约3.4×10⁻³ W cm⁻²的创纪录饱和功率密度。实验和理论计算均表明，氧诱导的晶格压缩应变是其高性能和稳定性的原因。此外，该策略的通用性在n型和p型小分子有机半导体中均有体现。这项工作为提高有机半导体的迁移率和稳定性提供了一种新策略，为有机器件的实际应用铺平了道路。
