Pedersen Henrik, Hsu Chih-Wei, Nepal Neeraj, Woodward Jeffrey M, Eddy Charles R
Department of Physics, Chemistry and Biology, Linköping University, SE-581 83 Linköping, Sweden.
Electronics Science and Technology Division, U.S. Naval Research Laboratory, Washington, District of Columbia 20375, United States.
Cryst Growth Des. 2023 Sep 19;23(10):7010-7025. doi: 10.1021/acs.cgd.3c00775. eCollection 2023 Oct 4.
Indium nitride (InN) is a low-band-gap semiconductor with unusually high electron mobility, making it suitable for IR-range optoelectronics and high-frequency transistors. However, the development of InN-based electronics is hampered by the metastable nature of InN. The decomposition temperature of InN is lower than the required growth temperature for most crystal growth techniques. Here, we discuss growth of InN films and epitaxial layers by atomic layer deposition (ALD), a growth technique based on self-limiting surface chemical reactions and, thus, inherently a low-temperature technique. We describe the current state of the art in ALD of InN and InN-based ternary alloys with GaN and AlN, and we contrast this to other growth technologies for these materials. We believe that ALD will be the enabling technology for realizing the promise of InN-based electronics.
氮化铟（InN）是一种低带隙半导体，具有异常高的电子迁移率，使其适用于红外波段光电子学和高频晶体管。然而，基于InN的电子器件的发展受到InN亚稳态性质的阻碍。InN的分解温度低于大多数晶体生长技术所需的生长温度。在此，我们讨论通过原子层沉积（ALD）生长InN薄膜和外延层，ALD是一种基于自限性表面化学反应的生长技术，因此本质上是一种低温技术。我们描述了InN以及与GaN和AlN形成的基于InN的三元合金的ALD技术的当前发展水平，并将其与这些材料的其他生长技术进行对比。我们相信ALD将成为实现基于InN的电子器件前景的使能技术。
