Cho Jaehun, Jung Jinyong, Kim Seong Bok, Ju Woo Ri, Kim Da Hyeon, Byun Myunghwan, Kim June-Seo
Division of Nanotechnology, Daegu Gyeongbuk Institute of Science and Technology (DGIST), Daegu 42988, Republic of Korea.
Department of Physics and Chemistry, Daegu Gyeongbuk Institute of Science and Technology (DGIST), Daegu 42988, Republic of Korea.
Materials (Basel). 2023 Sep 26;16(19):6418. doi: 10.3390/ma16196418.
Magnetic heterojunction structures with a suppressed interfacial Dzyaloshinskii-Moriya interaction and a sustainable long-range interlayer exchange coupling are achieved with an ultrathin platinum insertion layer. The systematic inelastic light scattering spectroscopy measurements indicate that the insertion layer restores the symmetry of the system and, then, the interfacial Dzyaloshinskii-Moriya interaction, which can prevent the identical magnetic domain wall motions, is obviously minimized. Nevertheless, the strong interlayer exchange coupling of the system is maintained. Consequently, synthetic ferromagnetic and antiferromagnetic exchange couplings as a function of the ruthenium layer thickness are observed as well. Therefore, these optimized magnetic multilayer stacks can avoid crucial issues, such as domain wall tilting and position problems, for next-generation spintronic logic applications. Moreover, the synthetic antiferromagnetic coupling can open a new path to develop a radically different NOT gate via current-induced magnetic domain wall motions and inversions.
通过超薄铂插入层实现了具有抑制的界面Dzyaloshinskii-Moriya相互作用和可持续的长程层间交换耦合的磁性异质结结构。系统的非弹性光散射光谱测量表明，插入层恢复了系统的对称性，进而明显最小化了可阻止相同磁畴壁运动的界面Dzyaloshinskii-Moriya相互作用。然而，系统的强层间交换耦合得以保持。因此，还观察到了作为钌层厚度函数的合成铁磁和反铁磁交换耦合。所以，这些优化的磁性多层堆叠可以避免下一代自旋电子逻辑应用中的关键问题，如畴壁倾斜和位置问题。此外，合成反铁磁耦合可以通过电流诱导的磁畴壁运动和反转开辟一条开发截然不同的非门的新途径。
