Zhang Yanming, Li Qichao, Ye Xiaowo, Wang Long, He Zhiyan, Zhang Teng, Wang Kunchan, Shi Fangyuan, Yang Jingyun, Jiang Shenghao, Wang Xuri, Chen Changxin
National Key Laboratory of Advanced Micro and Nano Manufacture Technology, Key Laboratory for Thin Film and Microfabrication of Ministry of Education, School of Electronic Information and Electrical Engineering, Shanghai Jiao Tong University, Shanghai 200240, China.
Nanomaterials (Basel). 2023 Oct 4;13(19):2700. doi: 10.3390/nano13192700.
Infrared detectors have broad application prospects in the fields of detection and communication. Using ideal materials and good device structure is crucial for achieving high-performance infrared detectors. Here, we utilized black phosphorus (BP) and single-walled carbon nanotube (SWCNT) films to construct a vertical van der Waals heterostructure, resulting in high-performance photovoltaic infrared detectors. In the device, a strong built-in electric field was formed in the heterojunction with a favored energy-band matching between the BP and the SWCNT, which caused a good photovoltaic effect. The fabricated devices exhibited a diode-like rectification behavior in the dark, which had a high rectification ratio up to a magnitude of 10 and a low ideal factor of 1.4. Under 1550 nm wavelength illumination, the 2D BP/SWCNT film photodetector demonstrated an open-circuit voltage of 0.34 V, a large external power conversion efficiency (η) of 7.5% and a high specific detectivity (D*) of 3.1 × 10 Jones. This external η was the highest among those for the photovoltaic devices fabricated with the SWCNTs or the heterostructures based on 2D materials and the obtained D* was also higher than those for most of the infrared detectors based on 2D materials or carbon materials. This work showcases the application potential of BP and SWCNTs in the detection field.
红外探测器在探测和通信领域具有广阔的应用前景。使用理想的材料和良好的器件结构对于实现高性能红外探测器至关重要。在此，我们利用黑磷（BP）和单壁碳纳米管（SWCNT）薄膜构建了垂直范德华异质结构，从而得到了高性能的光伏红外探测器。在该器件中，异质结中形成了强大的内建电场，且BP与SWCNT之间具有良好的能带匹配，这导致了良好的光伏效应。所制备的器件在黑暗中表现出类似二极管的整流行为，其整流比高达10的量级，理想因子低至1.4。在1550 nm波长光照下，二维BP/SWCNT薄膜光电探测器的开路电压为0.34 V，外部功率转换效率（η）高达7.5%，比探测率（D*）高达3.1×10 Jones。该外部η在基于SWCNT或基于二维材料的异质结构所制备的光电器件中是最高的，并且所获得的D*也高于大多数基于二维材料或碳材料的红外探测器。这项工作展示了BP和SWCNT在探测领域的应用潜力。
